Microprobe tips and methods for making

ABSTRACT

Embodiments of the present invention are directed to the formation of microprobe tips elements having a variety of configurations. In some embodiments tips are formed from the same building material as the probes themselves, while in other embodiments the tips may be formed from a different material and/or may include a coating material. In some embodiments, the tips are formed before the main portions of the probes and the tips are formed in proximity to or in contact with a temporary substrate. Probe tip patterning may occur in a variety of different ways, including, for example, via molding in patterned holes that have been isotropically or anisotropically etched silicon, via molding in voids formed in over exposed photoresist, via molding in voids in a sacrificial material that have formed as a result of the sacrificial material mushrooming over carefully sized and located regions of dielectric material, via isotropic etching of a the tip material around carefully sized placed etching shields, via hot pressing, and the like.

RELATED APPLICATIONS

This application claims benefit of U.S. Application Nos. 60/533,975,filed Dec. 31, 2003; 60/540,510, filed Jan. 29, 2004; 60/533,933, filedDec. 31, 2003; 60/536,865, filed Jan. 15, 2004; 60/540,511, filed Jan.29, 2004. Each of these applications is incorporated herein by referenceas if set forth in full herein including any appendices attachedthereto.

FIELD OF THE INVENTION

The present invention relates generally to microprobes (i.e. compliantcontact elements) and EFAB™ type electrochemical fabrication processesfor making them and more particularly to microprobe tips designs andprocess for making them.

BACKGROUND

A technique for forming three-dimensional structures (e.g. parts,components, devices, and the like) from a plurality of adhered layerswas invented by Adam L. Cohen and is known as ElectrochemicalFabrication. It is being commercially pursued by Microfabrica Inc.(formerly MEMGen® Corporation) of Burbank, Calif. under the name EFAB™.This technique was described in U.S. Pat. No. 6,027,630, issued on Feb.22, 2000. This electrochemical deposition technique allows the selectivedeposition of a material using a unique masking technique that involvesthe use of a mask that includes patterned conformable material on asupport structure that is independent of the substrate onto whichplating will occur. When desiring to perform an electrodeposition usingthe mask, the conformable portion of the mask is brought into contactwith a substrate while in the presence of a plating solution such thatthe contact of the conformable portion of the mask to the substrateinhibits deposition at selected locations. For convenience, these masksmight be generically called conformable contact masks; the maskingtechnique may be generically called a conformable contact mask platingprocess. More specifically, in the terminology of Microfabrica Inc.(formerly MEMGen® Corporation) of Burbank, Calif. such masks have cometo be known as INSTANT MASKS™ and the process known as INSTANT MASKING™or INSTANT MASK™ plating. Selective depositions using conformablecontact mask plating may be used to form single layers of material ormay be used to form multi-layer structures. The teachings of the '630patent are hereby incorporated herein by reference as if set forth infull herein. Since the filing of the patent application that led to theabove noted patent, various papers about conformable contact maskplating (i.e. INSTANT MASKING) and electrochemical fabrication have beenpublished:

-   -   (1.) A. Cohen, G. Zhang, F. Tseng, F. Mansfeld, U. Frodis and P.        Will, “EFAB: Batch production of functional, fully-dense metal        parts with micro-scale features”, Proc. 9th Solid Freeform        Fabrication, The University of Texas at Austin, p 161, August        1998.

(2.) A. Cohen, G. Zhang, F. Tseng, F. Mansfeld, U. Frodis and P. Will,“EFAB: Rapid, Low-Cost Desktop Micromachining of High Aspect Ratio True3-D MEMS”, Proc. 12th IEEE Micro Electro Mechanical Systems Workshop,IEEE, p 244, January 1999.

-   -   (3.) A. Cohen, “3-D Micromachining by Electrochemical        Fabrication”, Micromachine Devices, March 1999.    -   (4.) G. Zhang, A. Cohen, U. Frodis, F. Tseng, F. Mansfeld,        and P. Will, “EFAB: Rapid Desktop Manufacturing of True 3-D        Microstructures”, Proc. 2nd International Conference on        Integrated MicroNanotechnology for Space Applications, The        Aerospace Co., April 1999.    -   (5.) F. Tseng, U. Frodis, G. Zhang, A. Cohen, F. Mansfeld,        and P. Will, “EFAB: High Aspect Ratio, Arbitrary 3-D Metal        Microstructures using a Low-Cost Automated Batch Process”, 3rd        International Workshop on High Aspect Ratio MicroStructure        Technology (HARMST'99), June 1999.    -   (6.) A. Cohen, U. Frodis, F. Tseng, G. Zhang, F. Mansfeld,        and P. Will, “EFAB: Low-Cost, Automated Electrochemical Batch        Fabrication of Arbitrary 3-D Microstructures”, Micromachining        and Microfabrication Process Technology, SPIE 1999 Symposium on        Micromachining and Microfabrication, September 1999.    -   (7.) F. Tseng, G. Zhang, U. Frodis, A. Cohen, F. Mansfeld,        and P. Will, “EFAB: High Aspect Ratio, Arbitrary 3-D Metal        Microstructures using a Low-Cost Automated Batch Process”, MEMS        Symposium, ASME 1999 International Mechanical Engineering        Congress and Exposition, November, 1999.    -   (8.) A. Cohen, “Electrochemical Fabrication (EFAB™)”, Chapter 19        of The MEMS Handbook, edited by Mohamed Gad-EI-Hak, CRC Press,        2002.    -   (9.) Microfabrication—Rapid Prototyping's Killer Application”,        pages 1-5 of the Rapid Prototyping Report, CAD/CAM Publishing,        Inc., June 1999.

The disclosures of these nine publications are hereby incorporatedherein by reference as if set forth in full herein.

The electrochemical deposition process may be carried out in a number ofdifferent ways as set forth in the above patent and publications. In oneform, this process involves the execution of three separate operationsduring the formation of each layer of the structure that is to beformed:

-   -   1. Selectively depositing at least one material by        electrodeposition upon one or more desired regions of a        substrate.    -   2. Then, blanket depositing at least one additional material by        electrodeposition so that the additional deposit covers both the        regions that were previously selectively deposited onto, and the        regions of the substrate that did not receive any previously        applied selective depositions.    -   3. Finally, planarizing the materials deposited during the first        and second operations to produce a smoothed surface of a first        layer of desired thickness having at least one region containing        the at least one material and at least one region containing at        least the one additional material.

After formation of the first layer, one or more additional layers may beformed adjacent to the immediately preceding layer and adhered to thesmoothed surface of that preceding layer. These additional layers areformed by repeating the first through third operations one or more timeswherein the formation of each subsequent layer treats the previouslyformed layers and the initial substrate as a new and thickeningsubstrate.

Once the formation of all layers has been completed, at least a portionof at least one of the materials deposited is generally removed by anetching process to expose or release the three-dimensional structurethat was intended to be formed.

The preferred method of performing the selective electrodepositioninvolved in the first operation is by conformable contact mask plating.In this type of plating, one or more conformable contact (CC) masks arefirst formed. The CC masks include a support structure onto which apatterned conformable dielectric material is adhered or formed. Theconformable material for each mask is shaped in accordance with aparticular cross-section of material to be plated. At least one CC maskis needed for each unique cross-sectional pattern that is to be plated.

The support for a CC mask is typically a plate-like structure formed ofa metal that is to be selectively electroplated and from which materialto be plated will be dissolved. In this typical approach, the supportwill act as an anode in an electroplating process. In an alternativeapproach, the support may instead be a porous or otherwise perforatedmaterial through which deposition material will pass during anelectroplating operation on its way from a distal anode to a depositionsurface. In either approach, it is possible for CC masks to share acommon support, i.e. the patterns of conformable dielectric material forplating multiple layers of material may be located in different areas ofa single support structure. When a single support structure containsmultiple plating patterns, the entire structure is referred to as the CCmask while the individual plating masks may be referred to as“submasks”. In the present application such a distinction will be madeonly when relevant to a specific point being made.

In preparation for performing the selective deposition of the firstoperation, the conformable portion of the CC mask is placed inregistration with and pressed against a selected portion of thesubstrate (or onto a previously formed layer or onto a previouslydeposited portion of a layer) on which deposition is to occur. Thepressing together of the CC mask and substrate occur in such a way thatall openings, in the conformable portions of the CC mask contain platingsolution. The conformable material of the CC mask that contacts thesubstrate acts as a barrier to electrodeposition while the openings inthe CC mask that are filled with electroplating solution act as pathwaysfor transferring material from an anode (e.g. the CC mask support) tothe non-contacted portions of the substrate (which act as a cathodeduring the plating operation) when an appropriate potential and/orcurrent are supplied.

An example of a CC mask and CC mask plating are shown in FIGS. 1A-1C.FIG. 1A shows a side view of a CC mask 8 consisting of a conformable ordeformable (e.g. elastomeric) insulator 10 patterned on an anode 12. Theanode has two functions. FIG. 1A also depicts a substrate 6 separatedfrom mask 8. One is as a supporting material for the patterned insulator10 to maintain its integrity and alignment since the pattern may betopologically complex (e.g., involving isolated “islands” of insulatormaterial). The other function is as an anode for the electroplatingoperation. CC mask plating selectively deposits material 22 onto asubstrate 6 by simply pressing the insulator against the substrate thenelectrodepositing material through apertures 26 a and 26 b in theinsulator as shown in FIG. 1B. After deposition, the CC mask isseparated, preferably non-destructively, from the substrate 6 as shownin FIG. 1C. The CC mask plating process is distinct from a“through-mask” plating process in that in a through-mask plating processthe separation of the masking material from the substrate would occurdestructively. As with through-mask plating, CC mask plating depositsmaterial selectively and simultaneously over the entire layer. Theplated region may consist of one or more isolated plating regions wherethese isolated plating regions may belong to a single structure that isbeing formed or may belong to multiple structures that are being formedsimultaneously. In CC mask plating as individual masks are notintentionally destroyed in the removal process, they may be usable inmultiple plating operations.

Another example of a CC mask and CC mask plating is shown in FIGS.1D-1F. FIG. 1D shows an anode 12′ separated from a mask 8′ thatcomprises a patterned conformable material 10′ and a support structure20. FIG. 1D also depicts substrate 6 separated from the mask 8′. FIG. 1Eillustrates the mask 8′ being brought into contact with the substrate 6.FIG. 1F illustrates the deposit 22′ that results from conducting acurrent from the anode 12′ to the substrate 6. FIG. 1G illustrates thedeposit 22′ on substrate 6 after separation from mask 8′. In thisexample, an appropriate electrolyte is located between the substrate 6and the anode 12′ and a current of ions coming from one or both of thesolution and the anode are conducted through the opening in the mask tothe substrate where material is deposited. This type of mask may bereferred to as an anodeless INSTANT MASK™ (AIM) or as an anodelessconformable contact (ACC) mask.

Unlike through-mask plating, CC mask plating allows CC masks to beformed completely separate from the fabrication of the substrate onwhich plating is to occur (e.g. separate from a three-dimensional (3D)structure that is being formed). CC masks may be formed in a variety ofways, for example, a photolithographic process may be used. All maskscan be generated simultaneously, prior to structure fabrication ratherthan during it. This separation makes possible a simple, low-cost,automated, self-contained, and internally-clean “desktop factory” thatcan be installed almost anywhere to fabricate 3D structures, leaving anyrequired clean room processes, such as photolithography to be performedby service bureaus or the like.

An example of the electrochemical fabrication process discussed above isillustrated in FIGS. 2A-2F. These figures show that the process involvesdeposition of a first material 2 which is a sacrificial material and asecond material 4 which is a structural material. The CC mask 8, in thisexample, includes a patterned conformable material (e.g. an elastomericdielectric material) 10 and a support 12 which is made from depositionmaterial 2. The conformal portion of the CC mask is pressed againstsubstrate 6 with a plating solution 14 located within the openings 16 inthe conformable material 10. An electric current, from power supply 18,is then passed through the plating solution 14 via (a) support 12 whichdoubles as an anode and (b) substrate 6 which doubles as a cathode. FIG.2A, illustrates that the passing of current causes material 2 within theplating solution and material 2 from the anode 12 to be selectivelytransferred to and plated on the cathode 6. After electroplating thefirst deposition material 2 onto the substrate 6 using CC mask 8, the CCmask 8 is removed as shown in FIG. 2B. FIG. 2C depicts the seconddeposition material 4 as having been blanket-deposited (i.e.non-selectively deposited) over the previously deposited firstdeposition material 2 as well as over the other portions of thesubstrate 6. The blanket deposition occurs by electroplating from ananode (not shown), composed of the second material, through anappropriate plating solution (not shown), and to the cathode/substrate6. The entire two-material layer is then planarized to achieve precisethickness and flatness as shown in FIG. 2D. After repetition of thisprocess for all layers, the multi-layer structure 20 formed of thesecond material 4 (i.e. structural material) is embedded in firstmaterial 2 (i.e. sacrificial material) as shown in FIG. 2E. The embeddedstructure is etched to yield the desired device, i.e. structure 20, asshown in FIG. 2F.

Various components of an exemplary manual electrochemical fabricationsystem 32 are shown in FIGS. 3A-3C. The system 32 consists of severalsubsystems 34, 36, 38, and 40. The substrate holding subsystem 34 isdepicted in the upper portions of each of FIGS. 3A to 3C and includesseveral components: (1) a carrier 48, (2) a metal substrate 6 onto whichthe layers are deposited, and (3) a linear slide 42 capable of movingthe substrate 6 up and down relative to the carrier 48 in response todrive force from actuator 44. Subsystem 34 also includes an indicator 46for measuring differences in vertical position of the substrate whichmay be used in setting or determining layer thicknesses and/ordeposition thicknesses. The subsystem 34 further includes feet 68 forcarrier 48 which can be precisely mounted on subsystem 36.

The CC mask subsystem 36 shown in the lower portion of FIG. 3A includesseveral components: (1) a CC mask 8 that is actually made up of a numberof CC masks (i.e. submasks) that share a common support/anode 12, (2)precision X-stage 54, (3) precision Y-stage 56, (4) frame 72 on whichthe feet 68 of subsystem 34 can mount, and (5) a tank 58 for containingthe electrolyte 16. Subsystems 34 and 36 also include appropriateelectrical connections (not shown) for connecting to an appropriatepower source for driving the CC masking process.

The blanket deposition subsystem 38 is shown in the lower portion ofFIG. 3B and includes several components: (1) an anode 62, (2) anelectrolyte tank 64 for holding plating solution 66, and (3) frame 74 onwhich the feet 68 of subsystem 34 may sit. Subsystem 38 also includesappropriate electrical connections (not shown) for connecting the anodeto an appropriate power supply for driving the blanket depositionprocess.

The planarization subsystem 40 is shown in the lower portion of FIG. 3Cand includes a lapping plate 52 and associated motion and controlsystems (not shown) for planarizing the depositions.

Another method for forming microstructures from electroplated metals(i.e. using electrochemical fabrication techniques) is taught in U.S.Pat. No. 5,190,637 to Henry Guckel, entitled “Formation ofMicrostructures by Multiple Level Deep X-ray Lithography withSacrificial Metal layers”. This patent teaches the formation of metalstructure utilizing mask exposures. A first layer of a primary metal iselectroplated onto an exposed plating base to fill a void in aphotoresist, the photoresist is then removed and a secondary metal iselectroplated over the first layer and over the plating base. Theexposed surface of the secondary metal is then machined down to a heightwhich exposes the first metal to produce a flat uniform surfaceextending across the both the primary and secondary metals. Formation ofa second layer may then begin by applying a photoresist layer over thefirst layer and then repeating the process used to produce the firstlayer. The process is then repeated until the entire structure is formedand the secondary metal is removed by etching. The photoresist is formedover the plating base or previous layer by casting and the voids in thephotoresist are formed by exposure of the photoresist through apatterned mask via X-rays or UV radiation.

Electrochemical Fabrication provides the ability to form prototypes andcommercial quantities of miniature objects, parts, structures, devices,and the like at reasonable costs and in reasonable times. In fact,Electrochemical Fabrication is an enabler for the formation of manystructures that were hitherto impossible to produce. ElectrochemicalFabrication opens the spectrum for new designs and products in manyindustrial fields. Even though Electrochemical Fabrication offers thisnew capability and it is understood that Electrochemical Fabricationtechniques can be combined with designs and structures known withinvarious fields to produce new structures, certain uses forElectrochemical Fabrication provide designs, structures, capabilitiesand/or features not known or obvious in view of the state of the art.

A need exists in various fields for miniature devices having improvedcharacteristics, reduced fabrication times, reduced fabrication costs,simplified fabrication processes, and/or more independence betweengeometric configuration and the selected fabrication process. A needalso exists in the field of miniature (i.e. mesoscale and microscale)device fabrication for improved fabrication methods and apparatus.

A need also exists in the electrochemical fabrication field for enhancedtechniques that supplement those already known in the field to alloweven greater versatility in device design, improved selection ofmaterials, improved material properties, more cost effective and lessrisky production of such devices, and the like.

SUMMARY OF THE INVENTION

It is an object of some aspects of the invention to provide anelectrochemical fabrication technique capable of fabricating improvedmicroprobe tips.

It is an object of some aspects of the invention to provide anelectrochemical fabrication technique capable of fabricating improvedmicroprobes and microprobe tips.

It is an object of some aspects of the invention to provide an improvedelectrochemical fabrication technique capable of fabricating microprobetips.

It is an object of some aspects of the invention to provide an improvedelectrochemical fabrication technique capable of fabricating microprobesand microprobe tips.

Other objects and advantages of various aspects of the invention will beapparent to those of skill in the art upon review of the teachingsherein. The various aspects of the invention, set forth explicitlyherein or otherwise ascertained from the teachings herein, may addressone or more of the above objects alone or in combination, oralternatively may address some other object of the invention ascertainedfrom the teachings herein. It is not necessarily intended that allobjects be addressed by any single aspect of the invention even thoughthat may be the case with regard to some aspects.

In a first aspect of the invention, a method for creating a contactstructure, comprising: forming a contact tip having a desiredconfiguration; forming compliant probe structure electrochemically; andadhering the contact tip to the probe structure to form a contactstructure.

In a second aspect of the invention, a method for creating a contactstructure, comprising: forming a contact tip having a desiredconfiguration; forming compliant probe structure from a plurality ofadhered layers of electrodeposited material; and adhering the contacttip to the probe structure to form a contact structure.

In a third aspect of the invention, a method for creating a contactstructure, comprising: forming a contact tip having a desiredconfiguration; and forming compliant probe structure electrochemically,wherein the compliant probe structure is formed on the contact tip.

In a fourth aspect of the invention, a method for creating a contactstructure, comprising: forming a contact tip having a desiredconfiguration; and forming compliant probe structure from a plurality ofadhered layers of electrodeposited material, wherein the compliant probestructure is formed on the contact tip.

In a fifth aspect of the invention, a method for creating a contactstructure, comprising: forming compliant probe structureelectrochemically; and forming a contact tip having a desiredconfiguration, wherein the contact tip is formed on the compliant probestructure.

In a sixth aspect of the invention, a method for creating a contactstructure, comprising: forming compliant probe structure from aplurality of adhered layers of electrodeposited material; and forming acontact tip having a desired configuration, wherein the contact tip isformed on the compliant probe structure.

Further aspects of the invention will be understood by those of skill inthe art upon reviewing the teachings herein. Other aspects of theinvention may involve combinations of the above noted aspects of theinvention. Other aspects of the invention may involve apparatus that canbe used in implementing one or more of the above method aspects of theinvention. These other aspects of the invention may provide variouscombinations of the aspects presented above as well as provide otherconfigurations, structures, functional relationships, and processes thathave not been specifically set forth above.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1C schematically depict side views of various stages of a CCmask plating process, while FIGS. 1D-1G schematically depict a sideviews of various stages of a CC mask plating process using a differenttype of CC mask.

FIGS. 2A-2F schematically depict side views of various stages of anelectrochemical fabrication process as applied to the formation of aparticular structure where a sacrificial material is selectivelydeposited while a structural material is blanket deposited.

FIGS. 3A-3C schematically depict side views of various examplesubassemblies that may be used in manually implementing theelectrochemical fabrication method depicted in FIGS. 2A-2F.

FIGS. 4A-4I schematically depict the formation of a first layer of astructure using adhered mask plating where the blanket deposition of asecond material overlays both the openings between deposition locationsof a first material and the first material itself.

FIGS. 5A-5J schematically depict side views at various stages of theprocess for forming an array of probe elements according to a firstembodiment of the invention where the probe element tips are formed viaelectroplating onto a seed layer coated epoxy template which was moldedfrom a silicon wafer that underwent patterned anisotropic etching.

FIGS. 6A-6E schematically depict side views at various stages of processfor forming an array of probe elements according to a second embodimentof the invention which is similar to the first embodiment of theinvention with the exception that the probe element tips are formed adifferent material than the rest of the probe elements.

FIGS. 7A-7F schematically depict side views at various stages of aprocess for forming a probe element according to a third embodiment ofthe invention where the probe element tip is formed using a protrusionof patterned photoresist that is made to have an undercut

FIGS. 8A-8F schematically depict side views at various stages of aprocess for forming a probe element according to a fourth embodiment ofthe invention where the probe element tip is formed using an indentationin a patterned photoresist that is made to have sidewalls that taperoutward.

FIGS. 9A-9G schematically depict side views at various stages of aprocess for forming an array of probe elements according to a fifthembodiment of the invention where the probe element tips are formedusing protrusions of a patterned photoresist material over which anelectroplated material is made to mushroom and through which openingsare etched.

FIGS. 10A-10C schematically depict side views at various stages of aprocess for forming an array of probe elements according to a sixthembodiment of the invention where the probe element tips are formedusing protrusions of a patterned photoresist material over which anelectroplated material is made to mushroom.

FIGS. 11A-11F schematically depict partially transparent, perspectiveviews, side views along a central cut plane, and top views at variousstages of a process for forming an array of probe tips according to aseventh embodiment of the invention where the probe tips are formedusing a mold formed from a patterned deposition that forms multiplevoids (one per tip) followed by a blanket deposition that narrows thevoids and gives them a desired shape.

FIGS. 12A-12E schematically depicts partially transparent, perspectiveviews at various stages of a process for forming an array of probe tipsaccording to an eighth embodiment of the invention where the probe tipsare formed using a partially masked area of structural material or tipmaterial surrounded by a sacrificial material and then etching thestructural or tip material relative to the sacrificial material toachieved desired tip configurations.

FIGS. 13A-13C schematically depict side views at various stages of aprocess for forming an array of probe elements according to a ninthembodiment of the invention where the probe tips are formed afterforming the other portions of elements by placing patterned maskingmaterial over a tip material and etching away the tip material in theexposed regions leaving behind tip elements located on previously formedportions of the elements.

FIGS. 14A-14D schematically depict side views at various stages of aprocess for forming an embossing tool for forming probe tips with allarray elements present and having a first tip configuration.

FIGS. 15A-15D schematically depict side views at various stages of aprocess for forming an embossing tool for forming probe tips with only aportion of the array elements present and having a second tipconfiguration.

FIGS. 16A-16M schematically depict side views at various stages of aprocess for forming an array of probe elements according to a tenthembodiment of the invention where the probe element tips are formedusing the embossing tool produced according to FIGS. 14A-14D.

FIGS. 17A-17L schematically depict side views at various stages of aprocess for forming an array of probe elements according to an eleventhembodiment of the invention where the probe element tips are formedusing the embossing tool produced according to FIGS. 14A-14D, where theembossed material is conductive, and where selected probe elements arenot formed.

FIGS. 18A-18J schematically depict side views at various stages of aprocess for forming an array of probe elements according to a twelfthembodiment of the invention where the probe element tips are formedusing the embossing tool produced according to FIGS. 14A-14D and whereselected probe elements and probe tips are not formed.

FIGS. 19A-19N schematically depict side views at various stages of aprocess for forming an array of probe elements according to a thirteenthembodiment of the invention where some probe elements have differentheights and different tip configurations and where the probe tipelements are formed using the embossing tools produced according toFIGS. 14A-14D and FIGS. 15A-15D.

FIGS. 20A-20E schematically depict side views at various stages of aprocess for forming a probe element according to a fourteenth embodimentof the invention where the probe tip is coated with a desired contactmaterial which is protected from a sacrificial material use in formingthe probe element.

FIGS. 21A -21F schematically depict side views at various stages of aprocess for forming a probe element according to a fifteenth embodimentof the invention where the probe tip is given a tapered configurationand a coating of desired contact material which is protected from asacrificial material used in forming the probe element.

FIGS. 22A-22H schematically depict partially transparent, perspectiveviews of an example structure at various stages of a process for formingan array of probe tips and elements according to a sixteenth embodimentof the invention where the probe tips are formed using a silicon moldand the tips are protected from sacrificial material etchants by sealingthem between structural material and silicon prior removing sacrificialmaterial.

FIGS. 23A-23U depict an example process flow for fabricating probes of asingle height using mushrooming to produce the tips.

FIGS. 24A-24CC depict the process flow for an embodiment of theinvention in which the photoresist patterns needed to define the tipsthrough mushrooming are formed at the appropriate layer, but themushrooming deposition of sacrificial material is deferred until layersare built to a sufficient height to allow the full tip height to beformed.

FIGS. 25A-25D schematically depict side views at various stages of analternative process for forming an undercut dielectric pattern similarto that of the embodiment of FIG. 7A-7F where multiple deposits ofphotoresist will be used in combination with multiple exposures.

FIGS. 26A-26H depict the process for making the contact mask, whereasFIGS. 26I-26M illustrate the use of the contact mask in forming tips ona wafer.

FIGS. 27A-27B depicts an embodiment for generating probe tips whichinvolves the creation of photoresist molds with sloped sidewalls.

FIGS. 28A-28S depicts an embodiment which relates to a method offabricating probes with probe tips.

FIGS. 29A-29D depict a process where trumpet-like flare to the tip'sleading surface can occur due to bulging of the sacrificial metal.

FIGS. 30A-30D depicts an enhanced process which may be used if bulgingand flaring occurs.

FIGS. 31A-32B depict an alternative processes to allow the polymer toset, then use a directional plasma etch to remove the polymer from thesurface of the mushroomed sacrificial material and the bottom of thehole but letting it remain behind in the undercut regions.

FIGS. 33A-33D depict an approach where Cu fill-in can serve as a way forlater release and separation of the tip material from the Ni mold.

FIGS. 34A-34D depict a 2-layer tip structure which may be made usingphotoresist first, with a wider 1st layer and a narrower 2nd layer.

FIGS. 35A-35B depict probe tips as made by one or more of the variousprocesses described herein with an attachment material located thereonand there after used to bond the tips to probes.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS OF THE INVENTION

FIGS. 1A-1G, 2A-2F, and 3A-3C illustrate various features of one form ofelectrochemical fabrication that are known. Other electrochemicalfabrication techniques are set forth in the '630 patent referencedabove, in the various previously incorporated publications, in variousother patents and patent applications incorporated herein by reference,still others may be derived from combinations of various approachesdescribed in these publications, patents, and applications, or areotherwise known or ascertainable by those of skill in the art from theteachings set forth herein. All of these techniques may be combined withthose of the various embodiments of various aspects of the invention toyield enhanced embodiments. Still other embodiments may be derived fromcombinations of the various embodiments explicitly set forth herein.

FIGS. 4A-4I illustrate various stages in the formation of a single layerof a multi-layer fabrication process where a second metal is depositedon a first metal as well as in openings in the first metal where itsdeposition forms part of the layer. In FIG. 4A, a side view of asubstrate 82 is shown, onto which patternable photoresist 84 is cast asshown in FIG. 4B. In FIG. 4C, a pattern of resist is shown that resultsfrom the curing, exposing, and developing of the resist. The patterningof the photoresist 84 results in openings or apertures 92(a)-92(c)extending from a surface 86 of the photoresist through the thickness ofthe photoresist to surface 88 of the substrate 82. In FIG. 4D, a metal94 (e.g. nickel) is shown as having been electroplated into the openings92(a)-92(c). In FIG. 4E, the photoresist has been removed (i.e.chemically stripped) from the substrate to expose regions of thesubstrate 82 which are not covered with the first metal 94. In FIG. 4F,a second metal 96 (e.g., silver) is shown as having been blanketelectroplated over the entire exposed portions of the substrate 82(which is conductive) and over the first metal 94 (which is alsoconductive). FIG. 4G depicts the completed first layer of the structurewhich has resulted from the planarization of the first and second metalsdown to a height that exposes the first metal and sets a thickness forthe first layer. In FIG. 4H the result of repeating the process stepsshown in FIGS. 4B-4G several times to form a multi-layer structure areshown where each layer consists of two materials. For most applications,one of these materials is removed as shown in FIG. 4I to yield a desired3-D structure 98 (e.g. component or device).

The various embodiments, alternatives, and techniques disclosed hereinmay be combined with or be implemented via electrochemical fabricationtechniques. Such combinations or implementations may be used to formmulti-layer structures using a single patterning technique on all layersor using different patterning techniques on different layers. Forexample, different types of patterning masks and masking techniques maybe used or even techniques that perform direct selective depositionswithout the need for masking. For example, conformable contact masks maybe used during the formation of some layers while non-conformablecontact masks may be used in association with the formation of otherlayers. Proximity masks and masking operations (i.e. operations that usemasks that at least partially selectively shield a substrate by theirproximity to the substrate even if contact is not made) may be used, andadhered masks and masking operations (masks and operations that usemasks that are adhered to a substrate onto which selective deposition oretching is to occur as opposed to only being contacted to it) may beused.

FIGS. 5A-5J schematically depict side views at various stages of theprocess for forming an array of probe elements according to a firstembodiment of the invention where the probe element tips are formed viaelectroplating onto a seed layer coated epoxy template which was moldedfrom a silicon wafer that underwent patterned anisotropic etching.

FIG. 5A depicts a state of the process after a patterned silicon waferis supplied. The silicon wafer has been patterned by placing a mask overits surface and patterning the mask to have openings in regions thatcorrespond to desired probe tip locations. While the mask is in place anisotropic etching is preformed to create V-shaped or conically shapedholes in the silicon.

In alternative embodiments these openings may take the form of V-shapedtrenches where it is desired that probe tips take such a form. Theopenings 104 and silicon 102 correspond to desired probe tip locationsand represent the compliment of the probe tip shape. After the patternedsilicon is obtained a casting material 106, such as an epoxy is moldedover the patterned surface of the silicon as illustrated in FIG. 5B.

Next the molded inverted replica of the patterned silicon is separatedfrom the silicon as shown in FIG. 5C.

FIG. 5D depicts the state of the process after electrodepositing andplanarizing a sacrificial material 108 over the patterned surface of thereplica. The sacrificial material 108 may be, for example, copper.Depending on the conductive or dielectric nature of the material formingreplica 106, it may be necessary to form a seed layer or plating base onthe surface of material 106 prior to electroplating. Such a seed layermay take the form of sputtered titanium or chromium over which asputtered seed layer material may be located in preparation forelectroplating.

FIG. 5E depicts a state of the process after electroplated material 108is separated from replica 106.

FIG. 5F depicts a state of the process after a desired tip material 110is plated over the patterned surface of the sacrificial material 108.

Next as indicated in FIG. 5G the tip material 110 and sacrificialmaterial 108 are planarized to a level that causes individual tips 112a, 112 b, 112 c, 112 d, and 112 d, to become separated from one another.

FIG. 5H depicts the state of the process after multiple layers ofstructure have been formed where each layer consists of regions ofsacrificial material 108 and regions of structural material 110. Also asshown in FIG. 5H a bonding material 116 is shown as having beenselectively applied to exposed regions of conductive material 110associated with each probe element. Material 116 may be applied in avariety of manners such as, for example, electroplating via openings ina masking material. Material 116 may, for example, be a low meltingpoint metal such as tin, lead, a tin lead alloy, or other solder likematerial. After depositing the adhesion material it may be reflowed togive it a ball like configuration as shown in FIG. 5H. Before or afterapplication of the adhesion or bump material dicing of probe elementsinto desired groups may occur where the groups represent discretequantities and patterns of probes that may be used in a desiredapplication.

FIG. 5I depicts a state of the process after the probe structures havebeen flipped over and adhered to a substrate 118 via bumps or adhesionmaterial 116. Substrate 118 may, for example, be a space transformer orintermediate structure containing a desired network of conductive leads.

FIG. 5J depicts a state of the process after sacrificial material 108has been removed resulting in probes 120 a-120 e being independentlycontacted and mounted to substrate 118. The layer by layer built upportions of probes 120 a-120 e as depicted are not intended toillustrate any particular probe features or design configurations butinstead are intended to show the existence of an elongated structureextending from substrate 118 to tips 112 a-112 e. Probe configurationmade tight on appropriate form, for example, probe forms described inU.S. patent application Ser. No. 60/533,933 filed Dec. 31, 2003 andentitled “Electrochemically Fabricated Microprobes” may be used. Thisreferenced patent application is incorporated herein by reference as ifset forth in full.

In summary, the primary elements of the first embodiment include: (1) Anisotropically etching of desired probe tip configurations into siliconvia a patterned mask. (2) Cast a complimentary replica of the openingsin the silicon. The casting material may be, for example, an insulativeor conductive epoxy material. Prior to casting the silicon surface maybe treated with an appropriate release agent to aid in separating thewafer and the replicated pattern. (3) Separate the replica and thesilicon wafer. (4) If the surface of the replica is not conductive orplate-able apply a seed layer to the patterned surface of the replica.If necessary prior to applying a seed layer material, an adhesion layermaterial may be applied. The application of either or both of thesematerials may occur via a physical deposition process, such assputtering, a chemical vapor deposition process, an electrolessdeposition process, and or a direct metallization process. The adhesionlayer material may be, for example, titanium, chromium, atitanium-tungsten alloy, or the like. The seed layer material itself maybe, for example, copper, nickel, or any other material that may beapplied to the adhesion layer material onto which subsequent plating mayoccur. (5) Electroplate a sacrificial material to a desired height whichis at least as great as, and more preferably greater than, the height ofthe patterned protrusions on the replica. The sacrificial material may,for example, be copper or some other material that is readily separablefrom a structural material that the probe tips and rest of the probeelements will be made from. (6) Optionally planarize the surface of thesacrificial material so as to give the sacrificial material a referencesurface that will be useful in performing subsequent operations.Alternatively a casting operation or the like may be used to give thesacrificial material a desired reference surface. (7) The sacrificialmaterial is separated from the epoxy mold. (8) A desired tip metal isblanket plated onto the patterned surface of the sacrificial material toa sufficient height to fill the voids in the surface. (9) The tipmaterial and the sacrificial material are planarized so that the tipmetal separately fills each void in the sacrificial material withoutbridging the individual tip regions. A multi-layer electrochemicalfabrication process occurs so as to build up probe elements from aplurality of adhered layers of structural material, where each layerincludes structural material in desired locations and sacrificialmaterial in the remaining locations. (10) After formation of all layers,an adhesion material or bonding material is selectively located on thestructural material for each probe element. This bonding material maytake the form of a low temperature metal such as tin, tin-lead or othersolder like material. The selective application of the bonding materialmay occur in a variety of ways. For example, it may occur via a maskingand selective plating operation, followed by removal of the maskingmaterial, and potentially followed by the reflowing of the depositedmaterial to give it a rounded configuration over each probe element.(11) The structure may be diced into smaller groupings of probe elementshaving desired configurations in preparation for locating them ondesired locations of substrates such as space transformers or probe chipstructures or the like. (12) Use a flip chip process to bond the probeelements to the substrate using the bonding or adhesion material. (13)Remove the sacrificial material by etching to release and separate theindividual probe elements that have been mounted to the substrate.

In alternative embodiments this process may be used to produce singleprobe elements. In some variations of this embodiment, master patternsmay be made from other selective patterned materials and probe tipconfigurations may take on other shapes.

FIGS. 6A-6E schematically depict side views at various stages of processfor forming an array of probe elements according to a second embodimentof the invention which is similar to the first embodiment of theinvention with the exception that the probe element tips are formed adifferent material than the rest of the probe elements.

FIG. 6A depicts a state of the process after a tip material 150 isdeposited into a sacrificial molding material 152. If sacrificial moldmaterial 152 is not conductive or plate-able a seed layer andpotentially an adhesion layer may be formed on mold surface prior toplating material 150. In variations of this embodiment, material 150 maybe located on the patterned surface of material 152 using a processother then electroplating.

FIG. 6B depicts a state of the process after tip material 150 and moldmaterial 152 have been planarized to make tip elements 150 a-150 eindependent of one another by removing any bridging material 150 thatconnected them after the deposition operation.

FIG. 6C depicts a state of the process after multiple layers of theprobe elements have been formed according to an electrochemicalfabrication process where each layer includes regions of a sacrificialmaterial 154 and regions of structural material 156. The regions ofthese materials on each layer are defined by the desired cross sectionof the array of probe elements associated with that cross section. Afterformation of all layers 158 an adhesion or bonding material 160 isselectively located over the ends of structural material 156 (i.e. overthe distal end of the probe elements). Material 160 may be selectivelyapplied by masking surface 162 of layers 158 and then electrodepositingmaterial 160, (e.g. tin, tin-lead, or other solder like materials) intothe openings in the mask. After electrodeposition is completed the maskmay be removed and if desired bonding material 160 may be heated so thatit reflows to form rounded balls or bumps of material.

FIG. 6D depicts a state of the process after the array of probe elements164 have been bonded via bonding material 160 to a substrate 16, and thesacrificial material 154 has been removed. The order of attachment andthe order of removal may be performed in any desired manner. In otherwords, in some variations of this embodiment, the removal operation mayoccur prior to the attachment operation while in other variations ofthis embodiment the attaching operation may occur prior to the removaloperation.

In still other variations of the present embodiment where removal ofsacrificial material is to occur prior to attachment, the removal ofsacrificial material may occur prior to formation of the bumps 160 ofthe adhesion material being attached to the distal ends of thestructural material 156 forming the probe elements.

In still other variations of the present embodiment the last layer orlayers of the probe elements may be formed using a different materialthan sacrificial material 154. This different material may be aconductive or dielectric sacrificial material or it may be a dielectricstructural material. This different material may be put in place as partof the formation process for the last layer or layers or alternativelyit may be put in place after layer formation is completed and an etchingof the sacrificial material from surface 162 removes one or more layersof the material. After the different material is put in place, surface162 may be re-planarized and then bumps 160 formed. In still furthervariations of the present embodiment, bumps 160 may not be directlyformed on structural material 156 but instead may be formed in desiredlocations on a substrate 166 and then made to contact and bond to probeelements 164 during the adhesion operation.

FIG. 6E shows the state of the process after the original sacrificialmaterial 152 holding tips 150 a-150 e is removed thereby formingindependent probe elements 164 a-164 e on substrate 166. If thedifferent material described in one of the above variations is used,that different material may be removed before or after the adhesionprocess occurs or may remain as a part of the final structure and mayactually be used to enhance adhesion between the probe elements 164a-164 e and substrate 166.

FIGS. 7A-7F schematically depict side views at various stages of aprocess for forming a probe element according to a third embodiment ofthe invention where the probe element tip is formed using a protrusionof patterned photoresist that is made to have an undercut.

FIG. 7A depicts a state of the process where a temporary substrate 182is coated with a negative photoresist material 184, e.g. FuturrexNR9-8000, which has one or more openings 188 through which radiation 190may be directed to expose the photoresist material. Openings 188correspond to locations where probe element tip material 192 willeventually be located on substrate 182.

FIG. 7B depicts a state of the process after substrate 182 andphotoresist 184 have been immersed in a developing solution 194 suchthat unexposed portions of photoresist 184 are removed and such thatexposed region 184 a remains.

FIG. 7C depicts a state of the process after continuing to exposephotoresist element 184 a to developing solution so that it becomesoverdeveloped which causes undercutting of the photoresist to occurleading to the trapezoidal shaped element 184 b.

FIG. 7D depicts a state of the process after photoresist element 184 bhas been used as a mask in a through plating operation which results inthe deposition of a sacrificial material 196 which may be the same ordifferent from substrate material 182. If the deposition of sacrificialmaterial 196 is not sufficiently uniform a planarization operation maybe used to achieve the configuration depicted in FIG. 7D.

FIG. 7E depicts a state of the process after probe tip material 192 hasbeen deposited into the void created by the removal of photoresistmaterial 184 b. If necessary to give probe tip material 192 andsacrificial material 196 a desired surface configuration the uppersurface of these two materials may be planarized to yield theconfiguration shown in FIG. 7E.

FIG. 7F depicts a state of the process after electro chemicalfabrication of a plurality of layers produces probe element 202 boundedon one end by probe tip material 192 and bounded on the other end by anadhesion material 200. After formation of the completed probe tip (asshown) or probe tip array (not shown) the sacrificial material 196 maybe removed and the probe elements bonded to a substrate after whichtemporary substrate 182 may be removed.

In variations of this embodiment adhesion material 200 need not besurrounded by sacrificial material 196 as it may be directly patterndeposited. In such cases, or in cases where removal of the upper mostportion of the sacrificial material occurs it may be possible to bondprobe elements 202 to a desired substrate via bonding material 200 priorto removal of all of the sacrificial material. In such cases temporarysubstrate material 182 maybe removed before or after adhesion has takenplace.

The variations and features of this embodiment may have application invariations of the previously discussed embodiments or embodiments to bediscussed hereinafter just as variations and features of the previousembodiments may have application to creation of further variations ofthe present embodiment or variations of embodiments to be describedhereinafter just as features of the various embodiments to be discussedhereinafter and their variations may have applications to create furthervariations of the present embodiment or previously discussedembodiments.

FIGS. 8A-8F schematically depict side views at various stages of aprocess for forming a probe element according to a fourth embodiment ofthe invention where the probe element tip is formed using an indentationin a patterned photoresist that is made to have sidewalls that taperoutward.

FIG. 8A depicts a state of the process after a temporary substrate 212is coated with a positive photoresist 214 and a mask 216 with one ormore openings 218 positioned above the photoresist. Radiation 220 isallowed to expose the photoresist in hole regions 218.

FIG. 8B depicts a state of the process after exposed photoresist 214 isdeveloped and then overdeveloped to yield opening or openings 222 havingtapered side walls 224.

FIG. 8C depicts a state of the process after a probe element tipmaterial 226 is deposited into opening 222 of photoresist 214 and thenphotoresist 214 is removed.

FIG. 8D depicts a state of the process after a sacrificial material 228is electrodeposited over substrate 212 and over probe tip material 226.

FIG. 8E depicts a state of the process after the sacrificial materialand probe tip material have been planarized.

FIG. 8F depicts a state of the process after a plurality of layers ofprobe element 230 have been formed from a structural material 232 andsacrificial material 228. On one end probe element 230 includes theprobe tip made from material 226 and on the other end an adhesion orbonding material 234.

Next as described in association with the previous embodiments, probeelement 230 or an array of probe elements (not shown) may be releasedfrom the sacrificial material and from the temporary substrate andbonded to a desired substrate via adhesion material 234.

In variations of the above embodiment enhanced sloping or tapering ofthe photoresist material may occur not just as a result ofoverdevelopment but also as a result of underexposure and/or tailoredbaking operations.

FIGS. 9A-9G schematically depict side views at various stages of aprocess for forming an array of probe elements according to a fifthembodiment of the invention where the probe element tips are formedusing protrusions of a patterned photoresist material over which anelectroplated material is made to mushroom and through which openingsare etched.

FIG. 9A depicts a state of the process after a temporary substrate 232is coated with a seed layer material or seed layer stack 234 and that isin turn coated with a photoresist material 236. Located above thephotoresist material is a photomask 238 which contains openings 240a-240 e through which radiation 242 may expose and latently patternphotoresist material 236.

FIG. 9B depicts a state of the process after development of the exposedand latently patterned photoresist 238 yields small plugs of photoresistmaterial 238 a-238 d which mark locations where probe tip elements willbe formed.

FIG. 9C depicts a state of the process after a sacrificial material 244is deposited into the openings between and adjacent to photoresist plugs238 a-238 d. If necessary the photoresist plugs and depositedsacrificial material 244 may be planarized to yield the structuralconfiguration shown in FIG. 9C.

In variations of the embodiment such planarization may not be necessarywhile in other embodiments such planarization may be useful in enhancingthe uniformity of mold patterns that will be created.

FIG. 9D depicts a state of the process after additional deposition orcontinued deposition operations causes outward mushrooming ofsacrificial material over the photoresist plugs. In the context of thepresent application mushrooming refers to the in plane spreading of theelectrodeposited material occurring over dielectric material as theheight of the deposition grows.

FIG. 9E depicts a state of the process after a desired amount ofmushrooming has occurred (i.e. spillover of deposited conductivesacrificial material onto the dielectric photoresist plugs) and as RIEexposure 246 has isotropically etched through the photoresist plugs tovertically create an opening extending from plating base 232 through thedielectric and sacrificial materials. These openings and surroundingconductive and sacrificial materials form molds in which probe elementtip material may be deposited. The probe tip material may consist of asingle material 248 (see FIG. 9F) that fills openings 250 a-250 d, oralternatively may be a relatively thin coating of a desired materialthat is backed by a secondary tip material (not shown). If necessary,after deposition of probe tip material 248 the surface of thesacrificial and probe tip materials may be planarized to yield theconfiguration shown in FIG. 9F.

FIG. 9G depicts a state of the process after a plurality ofelectrochemically fabricated layers complete formation of probe elements252 out of a structural material 254 and sacrificial material 244 andafter deposition of an adhesion or bonding material 256 has occurred.

As with the previously discussed embodiments probe elements mayindividually or in desired array patterns be diced from one another,temporary substrate material may be removed, seed layer material may beremoved, remaining photoresist material may be removed and probeelements 252 may be bonded to a desired substrate via bonding oradhesion material 256.

FIGS. 10A-10C schematically depict side views at various stages of aprocess for forming an array of probe elements according to a sixthembodiment of the invention where the probe element tips are formedusing protrusions of a patterned photoresist material over which anelectroplated material is made to mushroom. The embodiments of FIGS.10A-10C are similar to that of FIGS. 9A-9G with the exception that thephotoresist material over which mushrooming of sacrificial materialoccurs is not etched though.

FIG. 10A depicts a state of the process after a probe tip material 262begins to fill voids 264 a to 264 d but horizontal growth of the depositfrom the sides of sacrificial material 244.

FIG. 10B depicts a state of the process after openings 264 a-264 d havebeen filled with tip probe material 262 and after planarization hasremoved portions of material 262 that bridged over sacrificial material244 and connected individual probe tip elements together.

FIG. 10C depicts a state of the process after probe elements 266 havebeen completed by the electrochemical fabrication of a plurality oflayers of structural material 254 and sacrificial material 244 and aftera bonding or adhesion material 256 has been deposited. As with theembodiment of FIGS. 9A-9G probe elements 266 may be adhered to a desiredsubstrate via bonding material 256 and sacrificial material 244 may beremoved along with photoresist material 238, seed layer material 234,and temporary substrate 232 to yield a plurality of independent probeelements connected to a substrate with desired conductive interconnectsand the like.

FIGS. 11A-11F schematically depict partially transparent, perspectiveviews, side views along a central cut plane, and top views at variousstages of a process for forming an array of probe tips according to aseventh embodiment of the invention where the probe tips are formedusing a mold formed from a patterned deposition that forms multiplevoids (one per tip) followed by a blanket deposition that narrows thevoids and gives them a desired shape.

FIG. 11A depicts three views of the state of the process after asubstrate is supplied. View 302-1 provides a perspective view of thesubstrate. View 302-2 provides a side view of the substrate along theX-axis while view 302-3 provides a top view of the substrate in the X-Yplane. Substrate 302 is a temporary substrate and may be made from aconductive material or a dielectric material having a seed layer formedthereon.

FIG. 11B depicts three views of the substrate after a patterneddeposition of a sacrificial material (e.g. copper) has been patternedthereon. Sacrificial material 304 is patterned to contain two voids306-1 and 306-2. These voids represent locations where probe tips willbe located and in this illustration, only two probe tips will be formed.Of course, this process may be used to form a single probe tip or usedto form arrays of probe tips including tens, hundreds, or even thousandsof elements. As with FIG. 11A the various views of FIG. 11B are shown inconjunction with coordinate axis symbols which indicate the perspectivefrom which the view is taken.

FIG. 11C depicts three views of the state of the process after a blanketdeposition of a sacrificial material 308 occurs. Material 308 may or maynot be the same material as sacrificial material 304. The blanketdeposition of material 306 results in a filling in and a closing up ofthe voids 306-1 and 306-2 from the initial deposition of material 304.The closing up of the voids results in sloped walls of material 308surrounding unfilled portions of voids 306-1 and 306-2. Filling in ofvoid 306-1 occurs up to a position indicated by 312-1 while the fillingin of void-306-2 occurs up to a line element 312-2. The shape of theunfilled portion of the voids depends on the initial debt andconfiguration of original voids 306-1 and 306-2.

FIG. 11D provides three views of the state of the process aftersacrificial material (i.e. nickel) deposition occurs and after aplanarization operation occurs and after removal of any masking materialassociated with the patterned deposition occurs. The blanket deposit ofmaterial 306 as indicated in FIG. 11C provided desired voidconfigurations 314-2 and 314-1 which possessed shapes complimentary tothe desired shapes of probe tip elements to be formed. The operationsleading to FIG. 11D result in creation of probe tip elements 316-1 and316-2.

FIG. 11E depicts three views of the state of the process afterdeposition of another sacrificial material 320 occurs and afterplanarization of the resulting deposits occurs. Sacrificial material 320may be identical to sacrificial materials 308 and 304 or may bedifferent from one or both of them. The performance of the depositionand planarization operation of FIG. 11E is based on the assumption thatlayers of structural material forming probe elements will be added tothe tips as was indicated in the various previous embodiments set forthherein. If no such addition was to occur, the operations leading to FIG.11E need not have occurred.

FIG. 11F shows three views of the state of the process after each of thesacrificial materials and the substrate have been removed and under theassumption that no additional layers of structure (e.g. of probeelements) have occurred.

The seventh embodiment of the invention as illustrated in FIGS. 11A-11Fmay be considered to include the following major operations: (1) Supplya substrate. (2) Pattern deposit a first sacrificial material onto thesubstrate leaving openings or voids in the sacrificial material inlocations which will give rise to probe tip elements. The patterning ofthe sacrificial material may occur in a variety of ways, for example, itmay occur by first locating and patterning a masking material onto thesurface of the substrate and thereafter plating the sacrificial materialonto exposed regions of the substrate. Alternatively, a blanketdeposition of a sacrificial material may occur followed by patternedmasking and selective etching. In a further alternative, directdeposition of the sacrificial material may occur, for example, by inkjet printing or the like. (3) Blanket deposit a second sacrificialmaterial which may be identical to the first sacrificial material tobuild up the second sacrificial material over regions of the firstsacrificial material and to partially fill in voids in the firstsacrificial material such that voids of desired configuration occur inthe second sacrificial material which take on a shape complimentary tothat of the probe tip elements to be formed. (4) Pattern deposit astructural material into the voids formed in the second sacrificialmaterial and potentially to form structures of desired configurationabove the second sacrificial material. The patterned deposition of thestructural material may occur in a variety of manners, for example, itmay occur by locating and patterning a mask material over those portionsof the second sacrificial material not to receive structural material.(5) The surface of the structural material and the masking material mayoptionally be planarized at a desired height. (6) Assuming thatadditional layers of material are to be added, deposition of a thirdsacrificial material may occur. The third sacrificial material may bethe same as or different form either one or both of the first and secondsacrificial materials. The deposition of the third sacrificial materialmay occur in a blanket or patterned manner. (7) The surface of thedeposited materials may next be planarized if needed so that bothsacrificial and structural materials are exposed and ready for acceptingadditional material depositions associated with build up of probeelements or the like. (9) Build up layers of the structure as desiredfor example using electrofabrication techniques as disclosed elsewhereherein. (10) Remove the sacrificial material to release the probe tipsand other elements of the probe structures. Such release may occurbefore or after bonding of the probe elements to a new substrate.

Various alternatives to this seventh embodiment are possible. Forexample, after the patterned deposition operation of the firstsacrificial material and prior to any removal of associated maskingmaterial the surface of the sacrificial material may be planarized so asto give a controlled surface as a starting point for subsequentoperations.

In another variation of the embodiment, after the blanket depositionoperation of the second sacrificial material a flash or quick etchingoperation or series of etching and deposition operations may occur tosmooth out any irregularities in the surface of the second sacrificialmaterial and particularly any irregularities the void regions of thesecond sacrificial material which will be used for molding probe tipelements.

In addition or alternatively, after deposition of the second sacrificialmaterial the voids therein may be filled with a temporary conductive ordielectric material and the surface of the second sacrificial materialplanarized and thereafter the temporary material removed. Thisplanarization operation may improve the quality of the probe tipelements in regions slightly displaced from tip regions.

In another variation of the present embodiment the deposition of thesacrificial material and the deposition of the structural material maybe reversed such that the deposition of the sacrificial material is apatterned deposition while the deposition of the structural material maybe a blanket deposition or may continue to be a selective deposition.

The embodiments discussed thus far have contemplated the formation ofprobe tip elements prior to the formation of the remaining portions ofthe probe elements themselves. It should be understood that inalternative embodiments it may be possible to form, for example, thearms (i.e. extended portions) of the probe elements and thereafter toform and adhere the tip elements to the arm elements. Several of theembodiments discussed up to this point are susceptible to this reversalin formation order.

FIGS. 12A-12E schematically depicts partially transparent, perspectiveviews at various stages of a process for forming an array of probe tipsaccording to an eighth embodiment of the invention where the probe tipsare formed using a partially masked area of structural material or tipmaterial surrounded by a sacrificial material and then etching thestructural or tip material relative to the sacrificial material toachieved desired tip configurations.

FIG. 12A depicts an initiation point for this state of the process wherean array of probe elements 334 a-334 d have been formed on a substrate332 and are encapsulated (with the exception of an upper surface) with asacrificial material 336. In some variations of this embodiment thesubstrate may be a temporary substrate while in other variations it maybe a permanent substrate.

FIG. 12B depicts a state of the process after a masking material ofdesired configuration has been located over regions of the structuralmaterial 338 from which at least the tips of elements 334 a-334 d wereformed. The masking may take on a variety of patterns. For example, asindicated by element 342 a the masking material may be centered relativeto the last layer of material 338 of one of the probes, it may be offsettoward one side or the front or back of one of the probe elements asindicated by 342 b, it may be a circular patch centered over the tipmaterial as indicated by 342 c, or it may be a square patch located overthe tip material as indicated by 342 d.

FIG. 12C depicts a state of the process after a selective etchingoperation (e.g. a wet etch of nickel) is allowed to operate on thestructural material in the unmasked regions.

FIG. 12D depicts a state of the process after mask material overlayingthe etched structural material has been removed.

FIG. 12E depicts a state of the process after the substrate andsacrificial material have been removed leaving elements 334 a-334 d withtips structures 344 a-344 d which resulted form the relationship betweenthe mask size, its location and the size of the structural materialexposed to the etchant.

In this embodiment the probe elements took the form of lever armstructures as opposed to the form of vertically elongated structures aspresented in some of the previous embodiments. It will be understood bythose of skill in the art that the probe structures may be utilized inconjunction with the probe tip creation technique of the presentembodiments or may be of the indicated form or of the form presented inthe previous embodiments. Similarly it will be understood by those ofskill in the art that the probe tip creation techniques of thoseembodiments mat be combined with the formation of the cantilever typestructures of the present embodiment. It will be understood by those ofskill in the art that probe tip materials may be different from thematerials used to form the rest of the probe elements or they may be ofthe same material. It will also be understood by those of skill in theart that contact materials associated with probe elements may bedifferent form the probe tip materials themselves. Such contactmaterials may be applied after tip formation, for example, by a selectedelectrochemical deposition process or sputtering process or the like.Alternatively contact materials may be deposited during operations forthe tip structure itself. It will also be understood by those of skillin the art that according to the present embodiment different probe tipsin a probe tip array may have similar tip configurations oralternatively they may have different configurations depending on howthey were formed and how it is intended that they will be used.

FIG. 13A-13C schematically depict side views at various stages of aprocess for forming an array of probe elements according to a ninthembodiment of the invention where the probe tips are formed afterforming the other portions of elements by placing patterned maskingmaterial over a tip material and etching away the tip material in theexposed regions leaving behind tip elements located on previously formedportions of the elements.

FIG. 13A depicts a state of the process after a plurality of probeelements have been formed from a plurality of stacked and adhered layersof structural material 352 and sacrificial material 354. These layerswere formed on a substrate 356 which may be a temporary substrate or apermanent substrate. The final layer of the built up probe elements arecovered with a layer of probe tip material 358 which are in turnoverlaid with a masking material which has been patterned to locateplugs of the masking material over locations where probe tip elementsare to exist. The size and shape of the plugs of masking material willdictate the resulting tip configuration after an etchant 362isotropically etches the probe tip material.

FIG. 13B depicts a state of the process after etching has been completedand probe tip material is etched and the sacrificial material isexposed. The shadowing from the masking material provides for a taperedetching of the covered tip material and thus results in probe tips of adesired configuration. In variations to the present embodiment, multiplemasking operations and etching operations may be used to further tailorthe final shape of the probe tips.

FIG. 13C depicts a state of the process after sacrificial material 354has been removed which yields the array of probe elements 366 a-366 dadhered to substrate 356 and including tips 368 of desiredconfiguration.

FIG. 14A-14D schematically depict side views at various stages of aprocess for forming an embossing tool for forming probe tips with allarray elements present and having a first tip configuration.

FIG. 14A depicts a state of the process after a desired substratematerial 372 is supplied while FIG. 14B depicts a state of the processafter selective etching of substrate material 372 results in voids 374a-374 e being formed. The etching that occurred to yield the voids of374 a-374 e may have been implemented via the location and patterning ofa mask material onto the surface of substrate 372. Substrate 372 may forexample be silicon and the etchant may be, for example, KOH.

FIG. 14C depicts a state of the process after a mold material (e.g.epoxy material) 376 has been cast over the patterned surface ofsubstrate 372.

FIG. 14D depicts a state of the process after mold material 376 hassolidified and has been separated from the patterned substrate 372. Thespacing of protrusions 378 a-378 e on tool 380 corresponds to locationswhere probe tip elements are to be formed, for example, as will bedescribed in the embodiment of FIG. 16.

FIG. 15A-15D schematically depict side views at various stages of aprocess for forming an embossing tool for forming probe tips with only aportion of the array elements present and having a second tipconfiguration.

FIG. 15A-15D illustrate states of the process which are analogous tothose illustrated in FIGS. 14A-14B with the exception that voids 384 cand 384 d are etched so as to have a different configuration than voids374 c and 374 d, and where no voids in substrate 382 are formed whichcorrespond to locations of voids 374 a, 374 b and 374 e of FIG. 14B. Assuch, after completion of tool 390 from solidified molding material 386the tool only contains protrusions 378 c and 378 d.

In comparing the tools of FIG.15D and FIG.14D it may be considered thatthe tool of FIG. 15B includes only a portion of the possible protrudingelements necessary to form a complete array of probe tips whereas theprotrusions of FIG. 14D may be used to form a complete array. As will beunderstood after reviewing the next embodiments, each of these tools mayhave use in forming probe element arrays with tips of desiredconfiguration.

FIGS. 16A-16M schematically depict side views at various stages of aprocess for forming an array of probe elements according to a tenthembodiment of the invention where the probe element tips are formedusing the embossing tool produced according to FIGS. 14A-14D.

FIG. 16A depicts a state of the process after a substrate 402 is coatedwith a photoresist or other polymeric material 404.

FIG. 16B depicts a state of the process after embossing tool 380 hasbeen placed against polymeric material 404 while FIG. 16C depicts astate of the process after embossing tool 380 is made to embosspolymeric material 404.

FIG. 16D depicts a state of the process after tool 380 has been removedleaving behind substrate 402 with polymeric material 404 located thereonand with voids 406 a-406 e located in the polymeric material.

FIG. 16E depicts a state of the process after a seed layer material 408is coated over the patterned polymeric material 404. The seed layermaterial may be of any appropriate sacrificial material that may beseparated from a probe tip material without damaging it. For example,the seed layer material may be sputtered copper, tin, gold or the like.Prior to formation of the seed layer, if necessary, an adhesion layermay be located onto the surface of the patterned polymeric material.

FIG. 16F depicts a state of the process after a probe tip material 412has been plated over plating base 408. As indicated in FIG. 16F thedeposition of probe tip material 412 occurs in a blanket fashion. Invariations of this embodiment, probe tip material may be deposited in aselected manner such that regions between probe tip locations 414 a-414e would not receive probe tip material.

In such variations masking material associated with the selectivedeposition may be removed and a sacrificial material deposited (whichmay be the same as the seed layer material) and then the sacrificialmaterial and probe tip material planarized to a desired level on whichlayers of structure may be formed.

Alternatively, prior to removal of the masking material, planarizationof the combined masking material and probe tip material may occur. Themasking material may then be removed and then sacrificial material addedand another planarization operation implemented if desired.

FIG. 16G depicts a state of the process after a planarization operationtrims the height of probe tip material and sacrificial material (e.g.seed layer material) to a common level such that probe tip material isremoved from regions that separate desired probe tip locations. Inachieving the result depicted in FIG. 16G it is assumed that the initialseed layer thickness was sufficient to allow the planarization operationto occur. If this was not the case one of the alternative embodimentsmentioned above in association with FIG. 16F could be implemented.

FIG. 16H depicts a state of the process after a plurality of layers ofstructural material 416 and sacrificial material 418 have been depositedto build up the structure of the probe elements. The structural materialmay, for example, be nickel or nickel-cobalt, and the probe tip materialmay be, for example, rhodium, or rhenium, while the sacrificial materialmay, for example, be copper or tin. As indicated in FIG. 16H though allprobe element tips in the array were formed not all associated probeelement structures were formed. In particular probe tips 414 a, 414 band 414 e have associated elements of probe structure formed while probetips 414 c and 414 d do not. During a subsequent operation of theprocess probe tips 414 c and 414 d will be removed from the probe array.

In an alternative embodiment instead of forming probe tip elements 414 cand 414 d those probe tip locations may simply have been masked prior todeposit of probe tip material.

FIG. 16I depicts a state of the process after an adhesion or bondingmaterial has been selectively deposited onto the distal end of the probestructures.

FIG. 16J depicts a state of the process after adhesion material has beenreflowed to give it a rounded or ball like configuration.

FIG. 16K shows the state of the process after unreleased probestructures have been inverted and contacted to a permanent substrate 424which includes regions of a second adhesion material 426 that correspondto locations of adhesion material 420.

FIG. 16L depicts a state of the process after bonding of the probestructures and the permanent substrate occur and sacrificial material418 is removed.

FIG. 16M depicts the state of the process after probe tips 414 a, 414 band 414 d have been released from the seed layer material, polymericmaterial and substrate 402 to yield completed probes 426 a, 426 b and426 e on the permanent substrate 424.

FIGS.17A-17L schematically depict side views at various stages of aprocess for forming an array of probe elements according to an eleventhembodiment of the invention where the probe element tips are formedusing the embossing tool produced according to FIGS. 14A-14D, where theembossed material is conductive, and where selected probe elements arenot formed.

The process of FIGS. 17A-17L is similar to that of FIGS. 16A-16M withthe exception that the seed layer of FIG. 16E is not necessary (as thematerial to be embossed is a conductor such as tin in this embodiment).

FIG. 17A depicts a state of the process after a temporary substrate 452is provided with a planarized coating of a conductive sacrificialmaterial 454 located thereon. Sacrificial material 454 may be anyappropriate material that may be removed from a probe tip materialwithout damaging the tips and possibly removed from a material ofsubstrate 452.

In some variations of this embodiment the sacrificial material 454 andthe material substrate 452 may be one and the same material.

FIG. 17B depicts a state of the process after embossing tool 380 isbrought into initial contact with sacrificial material 454.

FIG. 17C depicts a state of the process after embossing tool 380 hasbeen made to penetrate into sacrificial material 454. This may be done,for example, by heating the embossing tool and/or the sacrificialmaterial such that in locations where contact is made the sacrificialmaterial is flowable and can be flowed or otherwise reshaped to take theform dictated by the patterning on tool 380.

FIG. 17D depicts a state of the process after embossing tool 380 hasbeen removed from embossed sacrificial material 454 leaving behind voids456 a-456 e corresponding to locations where probe tips may exist in aprobe tip array that is to be formed.

FIG. 17E depicts a state of the process after a probe tip material 458is deposited over the patterned surface of sacrificial material 454.

FIG. 1 7F depicts a state of the process after the sacrificial materialand probe tip material have been planarized to a common level.

FIG. 17G depicts a state of the process after formation of probeelements has been completed as the result of the electrodeposition of aplurality of layers where each layer contains regions of structuralmaterial 462, corresponding to locations of probe elements, andsacrificial material 464. Sacrificial material 464 may be the same ordifferent from sacrificial material 454.

FIG. 17H depicts a state of the process after an adhesion material orbonding material 466 has been pattern deposited onto the uppermostsurface of the probe structures.

FIG. 17I depicts a state of the process after adhesion material 466 hasbeen reflowed to give it a rounded or bubbled up shape as shown in FIG.17I.

FIG. 17J depicts a state of the process after unreleased probestructures have been inverted and bonded to a permanent substrate 468which includes regions of a second adhesion material 470 whichcorrespond to regions of the first adhesion material 466 located on theelectrochemically fabricated layers of structure making up the probeelements.

FIG. 17K depicts a state of the process after sacrificial material 464has been removed.

FIG. 17L depicts a state of the process after the original substrate 452and sacrificial material 454 have been removed thereby yielding releasedprobe structures 472 a, 472 b and 472 e which are bonded to permanentsubstrate 468. As indicated in FIG. 17G probe tip regions 474 a, 474 band 474 e had structural material corresponding to probe elementsadhered thereto whereas probe tip elements 474 c and 474 d did not.

As such, after the final separation of sacrificial material 454 andsubstrate 452 from the probe elements bonded to substrate 468, tipelements 474 c and 474 d were removed.

FIG.18A-18J schematically depict side views at various stages of aprocess for forming an array of probe elements according to a twelfthembodiment of the invention where the probe element tips are formedusing the embossing tool produced according to FIGS. 14A-14D and whereselected probe elements and probe tips are not formed.

FIG. 18A begins with a structure similar to that shown in FIG. 17F alongwith a masking material 472 located above the probe tip elements.

FIG. 18B depicts a state of the process after patterning of the maskingmaterial results in an opening or openings above probe elements 474 cand 474 d that are to be removed.

FIG. 18C depicts a state of the process after a selective etchingoperation removes probe tip material 438 from probe tip locations 474 cand 474 d.

FIG. 18D depicts a state of the process after masking material 472 hasbeen removed.

FIG. 18E depicts a state of the process after electrochemicalfabrication of a plurality of layers occurs above the probe tipelements. In particular a structural material 462 is deposited alongwith a sacrificial material 464. In the process of forming the firstelectrochemically fabricated layer sacrificial material 464 is made tofill in voids 476 c and 476 d.

FIGS. 18F-18J are similar to FIGS. 17H-17L and thus will not bediscussed in detail at this time with the exception of noting that uponfinal release there are no probe tip elements 474 c or 474 d that needto be removed.

FIGS. 19A-19N schematically depict side views at various stages of aprocess for forming an array of probe elements according to a thirteenthembodiment of the invention where some probe elements have differentheights and different tip configurations and where the probe tipelements are formed using the embossing tools produced according toFIGS. 14A-14D and FIG. 15A-15D.

The process of FIGS. 19A-19N begins with the state of the process offorming an array of microstructures as depicted in FIG. 17G.

FIG. 19A depicts a state of the process after an opening has been etchedthrough a number of layers of deposited sacrificial material in theregion overlying probe tips 474 c and 474 d. This etching operation mayoccur by masking the upper surface of the last formed layer of thestructure with a masking material patterning the mask material to have aopening located therein above the regions of probes 474 c and 474 d andthen etching into the sacrificial material and removing the mask.

FIG. 19B depicts a state of the process after an embossable sacrificialmaterial is located in at least the opening etched through the layers ofsacrificial material. As shown in FIG. 19B the embossable material 482is blanket deposited over the previously deposited materials. Theembossable material may be tin or indium or the like.

FIG. 19C depicts a state of the process after the deposited embossablematerial has been planarized to remove it from all locations exceptwhere it is filling the opening etched through the sacrificial material.

FIG. 19D depicts a state of the process after embossing tool 390 islocated in initial contact with embossable material 482 while FIG. 19Edepicts a state of the process after tool 390 has been inserted into anembossed material 482.

FIG. 19F depicts a state of the process after embossing tool 390 hasbeen removed.

FIG. 19G depicts a state of the process after deposition of a desiredprobe tip material fills holes 484 c and 484 d in embossed material 482.The probe tip material may be rhenium or rhodium, for example.

FIG. 19H depicts a state of the process after a planarization operationhas trimmed the deposited materials back to a level corresponding tothat of the last layer of the structure formed. In variations of thisembodiment the last layer of structure formed may have been formed withexcess height initially, such that the various planarization operationsperformed could incrementally trim it down until a desired height isachieved as a result of a processing that led to the state of theprocess depicted in FIG. 19H.

FIG. 19I depicts a state of the process after a number of additionallayers of structure have been formed where these additional layers ofstructure include regions of structural material corresponding to probeelements and regions of sacrificial material located there between.

FIG. 19J depicts a state of the process after all layers of thestructures have been formed and after application of an adhesion orbonding material, for example, tin or tin lead or other solder likematerial or the like has been selectively deposited over regions ofstructural material.

FIG. 19K depicts a state of the process after the adhesion material hasbeen reflowed to give it a rounded or bold appearance.

FIG. 19L depicts a state of the process after the probe structures havebeen inverted and located adjacent to bonding pads 488 located on apermanent substrate 490 (e.g. a space transformer).

FIG. 19M depicts a state of the process after adhesion of the probeelements to the permanent substrate 490 has occurred and aftersacrificial material 464 has been removed.

FIG. 19N shows the state of the process after sacrificial material 454,substrate 452, and embossing material 482 have been removed therebyyielding a released probe array attached to permanent substrate 490. Ascan be seen in the figure, three of the probe elements have pointed tipswhile the other probe elements have rounded tip configurations.Similarly three of the elements are more elongated in nature then theother two elements.

Those of skill in the art will understand that use of the processesassociated with this thirteenth embodiment of the invention can produceprobe element arrays with any combination of numbers of probe elements,different tip configurations (whether as a single height or at multipleheights) single or multiple or variable height probe elements and/orprobe elements of different structural configurations (e.g. verticalextending spring like elements), and substantially horizontallyextending cantilever type elements).

FIGS. 20A-20E schematically depict side views at various stages of aprocess for forming a probe element according to a fourteenth embodimentof the invention where the probe tip is coated with a desired contactmaterial which is protected from a sacrificial material use in formingthe probe element.

The process of FIGS. 20A-20E may be used to form a desired coatingmaterial on a probe tip while protecting that probe tip material fromattack by a sacrificial material etchant or the like that it may not becompatible with.

FIG. 20A depicts a state of the process after a sacrificial material 502has received a patterned coating of a sacrificial material 504 (forexample, copper). Substrate 502 may be of the same sacrificial materialas 504 or it alternatively may be some other sacrificial material orpotentially even a structural material that can eventually be separatedfrom a probe tip. The openings over substrate 502 through thesacrificial material 504 correspond to locations where probe tipelements are to be formed.

FIG. 20B depicts a state of the process after a blanket deposition of aprotective material 506 is made to overcoat both the substrate and thesacrificial material. Next a probe tip floating material 508 is blanketdeposited over the protective material 506 and thereafter a structuralmaterial 510 is blanket deposited.

FIG. 20C depicts a state of the process after a planarization operationtrims off those portions of the protective material 506, the probe tipcoating material 508 and the structural material 510 that overlayregions of sacrificial material 504. As can be seen in FIG. 20C, probetip coating material 508 is separated from sacrificial material 504 by acoating of the protective material 506.

FIG. 20D depicts a state of the process after an additional layer ofstructural and sacrificial material is added. In particular it is notedthat the structural material forming part of a probe element is providedwith an extended width that completely covers the probe tip coatingmaterial and the protective material as well. As a result of theselecting of the size and configuration of the second layer tocompletely overlay the probe tip coating material the probe tip coatingmaterial is sandwiched between structural material 510 and protectivematerial 506 and thus any subsequent etching operations that areintended to remove material 504 will not cause damage to probe tipcoating material 508.

FIG. 20E depicts a state of the process after a spring like probeelement has been formed wherein the contact area of the probe element isshown as still being over-coated with the protective material and withthe probe tip coating material. In a subsequent operation not shownprotective material 506 may be removed to yield a probe element with adesired probe tip coating material.

It will be understood by those of skill in the art that though a singleprobe tip and probe element have been illustrated in this embodiment theprinciples set forth in the process of this embodiment may be extendedto the simultaneous creation of an array of probe tip elements or aplurality of arrays of probe tip elements.

FIGS. 21A-21F schematically depict side views at various stages of aprocess for forming a probe element according to a fifteenth embodimentof the invention where the probe tip is given a tapered configurationand a coating of desired contact material which is protected from asacrificial material used in forming the probe element.

FIG. 21A depicts a state of the process after a substrate 512 receives apatterned deposit of a sacrificial material 514. The substrate may be,for example, a structural material that can later be separated from theprobe tip or tips that are to be formed or alternatively it may be asacrificial material that may be destructively removed from the probetip or probe tip elements that are formed.

In some variations of the embodiment it may be of the same material assacrificial material 514. In some embodiments of the inventionsacrificial material 514 may be copper, tin, gold or the like.

FIG. 21B depicts a state of the process after electrochemical polishingor etching is used to round the corners of the sacrificial materialbounding the opening that extend there-through.

FIG. 21C depicts a state of the process after deposition of a protectivematerial 516, a probe tip coating material 518 and deposition of a probetip structural material 520 occurs.

FIG. 21D depicts a state of the process after two additional operationshave occurred, the first operation being a planarization operation ofthe deposited materials so that materials 516, 518 and 520 that overlaymaterial 514 are removed. Operation two involves the formation of a nextlayer 524 over planed layer 522.

FIG. 21E depicts the probe tip element 526 released from the substrate512 and sacrificial material 514 where the probe tip element stillincludes protective material 516 surrounding probe tip coating material518 and where probe tip coating material 518 is kept by probe tipstructural material 520.

FIG. 21F depicts a state of the process after protective coating 516 isremoved leaving probe tip coating material 518 surrounding probe tipstructural material 520.

FIGS. 22A-22H schematically depict partially transparent, perspectiveviews of an example structure at various stages of a process for formingan array of probe tips and elements according to a sixteenth embodimentof the invention where the probe tips are formed using a silicon moldand the tips are protected from sacrificial material etchants by sealingthem between structural material and silicon prior removing sacrificialmaterial.

FIG. 22A depicts the starting point of the embodiment which illustratesthat a silicon substrate 552 (e.g. having a 100 orientation) issupplied. In embodiments where other tip configurations are desireddifferent substrates could be selected. In the present embodiment thesilicon substrate is selected to have low resistance.

FIG. 22B depicts a state of the process after a number of voids 554a-554 j have been etched in the substrate each one corresponding to aprobe tip shape and relative position. As illustrated a trench 556 isalso etched into the silicon. The formation of such a trench is optionalas its use is strictly as an etching aid when it comes time to separatethe tip structures from the silicon. The tip configurations may be thatof pyramids or wedges formed by use of an anisotropic etchant such asKOH or TMAH and the like. Spherical or semi-spherical configurations maybe obtained by using other etchants such as HCN or XeF₂. Roundedpyramids or wedges may be obtained by using a combination of etchants.

In variations of the embodiment etching of all openings may besimultaneously performed using a single mask or alternatively multiplemasks could be used and etching could be performed at different times.

FIG. 22C depicts a state of the process after voids 554 a-554 j havebeen filled in with a desired tip material 560. The filling in of voids554 a-554 j may occur by an electroplating operation, a sputteringoperation or in some other manner. The filling in of the voids may occurwith trench 556 masked or with trench 556 open as any deposition tipmaterial in the trench 556 will simply fall away in a later operation.The filling of voids 554 a-554 j may involve the use of not only a probetip material but also a probe tip coating material.

FIG. 22D depicts a state of the process after selective deposition of astructural material 562 forms sealing caps over the probe tip material.The sealing caps preferably extend beyond the region of the probe tipmaterial to completely enclose the tip material between the siliconsubstrate and the structural material. If the probe tip material was notdeposited in a selective manner then prior to the deposition of thestructural material as indicated in FIG. 22D a planarization operationmay optionally be used to ensure that the structural material may bonddirectly to the silicon material.

After deposition of the structural material a sacrificial material maybe blanket deposited and the surface planarized leaving an exposedregion of structural material over the tip locations and sacrificialmaterial elsewhere (not shown).

FIG. 22E depicts a state of the process after multiple layers of theprobe elements have been built up via an electrochemical fabricationprocess or the like where the last layer leaves exposed regions ofstructural material corresponding to the last layer of the probeelements being surrounded by sacrificial material.

FIG. 22F shows the state of the process after an adhesion or bondingmaterial 566 is formed over the regions of structural material 562 whichmay or may not be surrounded by sacrificial material 564. Theun-released probe elements and substrate 552 are next flip chip bondedto a desired permanent substrate (e.g. a space transformer) as shown inFIG. 22G.

Next the sacrificial material is removed via an etching operation thatmay proceed from the sides of the array towards the center oralternatively the silicon substrate may be ground back to expose thetrench area which is filled with sacrificial material and then etchingmay proceed from the sides as well as from the central region of thearray.

FIG. 22H depicts a state of the process after both the silicon substrateand the sacrificial material have been removed.

A next embodiment of the invention relates to the fabrication of tipsfor microprobes using the ‘mushrooming’ approach described previouslyherein for tip fabrication, as well as the transfer/bond/releaseapproach to building microprobes upside down on a temporary wafer andending up with them bonded to a space transformer, (which is describedin more detail in U.S. patent application Ser. No. 60/533,947). Thispatent application is incorporated herein by reference. This embodimentalso relates to a method of fabricating probes having different heightswhich allows tips to be fabricated using the mushrooming approach onthese different-height tips.

When tip-equipped probes of multiple heights are produced with EFAB™,the tips at intermediate heights (i.e., not adjacent to the releaselayer on the temporary wafer) must be formed at the same height asnormal layer features that form part of other probes whose tips are atdifferent heights than these (e.g., adjacent to the release layer). Amajor challenge in producing tips at intermediate heights usingmushrooming occurs if the tip is taller than the thickness of singlelayer at the height of the tip, as is often the case unless one iswilling to distort the layer thicknesses in this region (undesirable) toaccommodate the tip height. This embodiment of the invention is of ameans for fabricating tips of intermediate height in which a) the tipheight can be greater than the height of the corresponding layer; b) thecorresponding layer height need not be altered in any way to accommodatethe tip.

FIGS. 23A-23U depict an example process flow for fabricating probes of asingle height using mushrooming to produce the tips. In FIG. 23A atemporary wafer (assumed to be alumina coated with seed and adhesionlayers) is shown. A blank region on the wafer surface to allow directaccess to the end-pointing probes is shown; this can be produced bylocally etching the seed and adhesion layers. Other than mushrooming infrom the edges of this end-pointing ‘pad’ region (this mushrooming isnot shown in the figures), the pad will not be plated. In FIG. 23B athick layer of sacrificial material (assumed to be Cu) has been plated,and in FIG. 23C, it has been planarized to form a release layer of thedesired thickness. In FIG. 23D, thin photoresist has been patterned toform insulating structures over which sacrificial metal can mushroom toform tip geometries and in FIG. 23E, Cu has been mushroomed over theseby plating for a controlled time.

FIG. 23F depicts a state of the process where Cu has been deposited byPVD (e.g., sputtering) over the wafer so that there is a continuousmetal film for plating the tips (otherwise the exposed resist area couldnot be plated over except via mushrooming, which requires thickplating). FIG. 23F also shows that the Cu has been removed from theend-pointing pad area (e.g., by etching) so that it won't plate up.

FIG. 23G depicts a state of the process where tip coating material(e.g., Re) has been applied, for example, by plating (if the tip coatingmaterial is applied by PVD, then the previous step of applying Cu by PVDcan be bypassed).

FIG. 23H depicts a state of the process where a tip backing material(e.g., Ni) has been plated. Note that in some cases, tips can befabricated made entirely of the tip coating material and no backingmaterial is needed. However, for tip coatings that are too soft (e.g.,Au) or which have too much residual stress (e.g., possibly Re or Rh) asdeposited, a thin coating would preferably be used, backed by anothermaterial.

FIG. 23I depicts a state of the process where the wafer has beenplanarized, resulting in the final form of the tips. In FIG. 23J theremaining layers of the probes (including a base for the solder) willhave been fabricated. In FIG. 23K, a thick resist has been deposited andpatterned. In FIG. 23L, solder has been plated into the resist aperturesand in FIG. 23M the resist has been stripped. In FIG. 23N, the solderhas been reflowed.

FIG. 23O depicts a state of the process where a protective coating hasbeen added to protect the build prior to dicing. This coating, ifsomewhat hard, can also minimize the degree to which burrs on the top(eventually, the bottom) surface of the die will be produced duringdicing. In FIG. 23P, the wafer has been diced, yielding a single diewith several probes; the burr is visible. In FIG. 23Q, the die has beenpartially released in order to a) remove the burr; b) recess the Cusurface below that of the solder. The latter is done for two reasons: 1)to eliminate the risk of solder wicking out across the Cu and shortingtogether neighboring probes; 2) to separate the solder from the Cu,allowing the former to be embedded in an underfill that protects itduring Cu release. A third possible reason for the partial release is tofacilitate and reduce the time required for the full release later; inthis regard, the release may be continued much further than shown here(limited only by the desire to a) hold all the probes in good alignmentuntil bonded; b) minimize the risk of damage to the probes untilbonded); c) prevent the underfill polymer (if used) from enveloping theprobes and interfering with their compliance (indeed, if the gap is toolarge the underfill may not properly wick in due to reduced capillarypressure).

FIG. 23R depicts a state of the process where the die has been flippedand aligned roughly to the bumps on a space transformer. A flux has beenapplied to either or both the die or space transformer to a) adhere thetwo together well enough to retain alignment until bonded; b) minimizeoxide formation which can interfere with good bonding.

FIG. 23S depicts a state of the process where the solder has beenreflowed, self-aligning the die, and the flux has been removed. In FIG.23T, an underfill polymer has been wicked in to fill the space under thedie.

FIG. 23U depicts the state of the process where the die has been fullyreleased from Cu. During this process, the Cu-enveloped photoresistfeatures patterned earlier would typically fall away or becomedissolved. If desired, the release process can be stopped and aphotoresist stripper used once the resist is exposed, then the releasecontinued.

FIGS. 24A-24CC depicts the process flow for an embodiment of theinvention. In this embodiment the photoresist patterns needed to definethe tips through mushrooming are formed at the appropriate layer(adjacent to the eventual tip wherever it may be), but the mushroomingdeposition of sacrificial material is deferred until layers are built toa sufficient height to allow the full tip height to be formed. Thisdeferment is accomplished by means of coating the resist with adielectric film after patterning. Alternative coatings (e.g., with ametal) are also possible, but if such coatings are platable, wouldrequire more effort to remove the coating given that it will first benecessary to remove the metal over it. In another embodiment (notshown), the mushrooming is performed in an incremental fashion(i.e.,.plating Cu as normal on each layer (which will partiallymushroom) or plating extra-thick Cu, which can fully mushroom), and thenthe mushroomed shape is planarized (along with the entire layer) to thelayer thickness (which truncates the mushroomed shape); this is thenrepeated on several layers, gradually building up the mushroomed ‘mold’for the tip. This is expected to result in a tip shape that is notidentical to that produced by the mushrooming process shown in FIG. 24E,but this may be acceptable. Indeed, if desired for the sake ofuniformity, all tips may be plated into molds produced in thislayer-by-layer process.

FIGS. 24A-24I are equivalent to FIGS. 23A-231, but in the case of FIGS.24A-24CC, not all probes are full height. Only three are shown withtheir tips being formed adjacent to the release layer. FIG. 24J depictsa state of the process in which some additional layers have been formed,stopping at the layer which needs to be patterned with photoresist todefine the mushrooming of the tips.

FIG. 24K depicts a thin photoresist has been patterned to forminsulating structures over which sacrificial metal can mushroom to formtip geometries. In FIG. 24L, the resist has been coated with a thindielectric coating. It is critical that the combined thickness of theresist and this dielectric coating not exceed the layer thickness of thenext layer, or else the dielectric coating (and possibly the resist)will be damaged by the subsequent planarization of this layer (dependingon the nature of the coating and the type of planarization performed, itmay be acceptable to remove a portion of the dielectric coating, so longas enough remains to prevent plating over the tips until the correcttime).

FIG. 24M depicts a state of the process in which photoresist forpatterning the next layer has been applied, and in FIG. 24N, it ispatterned. In FIG. 240, Cu has been plated (it is assumed here that theprobes are fabricated by pattern-plating the Cu and not the probestructural material). It should be noted that there is no plating (otherthan some sideways mushrooming not shown) on the dielectric coating.

FIG. 24P depicts a state of the process where the resist has beenstripped and in FIG. 24R, probe material has been plated. In FIG. 24S,the wafer has been planarized. The process shown in FIGS. 24M-24S may berepeated several times to build up several layers until there issufficient height available to build the entire tip mold by single-stepmushrooming.

FIG. 24T depicts a state of the process where the coating has beenremoved and in FIG. 24U, Cu has been mushroomed over the resist featuresby plating for a controlled time. In FIG. 24V, Cu has been deposited byPVD (e.g., sputtering) over the wafer.

FIG. 24W also depicts that the Cu has again been removed from theend-pointing pad area. In FIG. 24W, a tip coating material (e.g., Re)has been applied, for example, by plating (again, if the tip coatingmaterial is applied by PVD, then the previous step of applying Cu by PVDcan be bypassed).

FIG. 24X depicts a tip backing material (e.g., Ni) has been plated. InFIG. 24Y, the wafer has been planarized, resulting in the final form ofthe tips.

FIG. 24Z depicts a state of the process where the remaining layers ofthe probes (including a base for the solder) will have been fabricated.In FIG. 24M, solder has been pattern-deposited and then reflowed.Subsequent to this the wafer is cut. In FIG. 24BB, the die has beenflipped and the solder reflowed in the presence of flux to self-alignand bond the die, and the flux has been removed. Also in FIG. 24BB anunder fill polymer has been wicked in to fill the space under the die.

FIG. 24CC depicts a state of the process where the die has been fullyreleased from Cu, resulting in probes with tips of different heights.While the process flow is shown for probes having two different heights,this is by way of example and a group of probes having three or moredifferent heights can be so produced.

In the above embodiment particular a particular sacrificial material,Cu, and structural material, Ni, have been focused on but in alternativeembodiments other materials may be used.

FIGS. 25A-25D schematically depict side views at various stages of analternative process for forming an undercut dielectric pattern similarto that of the embodiment of FIG. 7A-7F where multiple deposits ofphotoresist will be used in combination with multiple exposures.

FIG. 25A depicts a state of the process where a substrate 582 is coatedwith a positive photoresist material and then is given a relativelysmall blanket exposure of radiation.

FIG. 25B depicts a state of the process after the first exposed coatingof photoresist of over-coated with a second coating 586.

FIG. 25C depicts a state of the process after a photomask is locatedover or adjacent to coating 586 and a relatively large exposure ofradiation is applied to regions where probe tips are to be formed.

FIG. 25D depicts a state of the process after a development operationcauses undercutting of the initial coating 584 of photoresist.

A next embodiment of the invention relates to a method of formingtapered tips for microprobes or other applications. It makes use of acontact mask similar to but molded to have tapered sidewalls in order tocreate a deposit of sacrificial material (typically Cu) having tapered,vs. straight, sidewalls. Another unique (though optional) aspect of thecontact mask is that it is partly transparent so as to allow alignmentto targets on the wafer; this can be generically useful (i.e., even forcontact masks with straight sidewalls) in that makes the contact maskmore like a photomask in alignment requirements, allowing alignmentbetween contact mask and wafer without having to view each withopposite-facing cameras in special alignment equipment, etc. Apartly-transparent contact mask is desirable in forming tips if it isdesired to form tips partway through a build (i.e., to create probeswith tips at different heights) in which case alignment to existinggeometry (vs. the largely-unpatterned wafer surface) is necessary.

FIGS. 26A-26H depicts the process for making the contact mask, whereasFIGS. 26I-26M illustrate the use of the contact mask in forming tips ona wafer.

FIGS. 26A-26B depicts a state of the process after the contact masksubstrate (normally just a thick Si wafer) is fabricated, assuming apartly-transparent contact mask is desired. In FIG. 26A, low-resistivity(i.e., heavily-doped) Si is shown adjacent to a rigid glass plate largerin diameter than the wafer, having at least one aperture to accommodatea spring contact. In FIG. 26 b, the wafer and glass have been bonded(e.g., by anodic bonding) and the spring inserted so as to makeelectrical contact with the wafer through the glass. It is possible tosee through the composite contact mask substrate (around the edges ofthe Si wafer) for purposes of alignment. Alternate approaches tofabricating a contact mask substrate such as this include drillingviewing holes through a Si wafer and surrounding a Si wafer by a glassring which is bonded or press fit to it.

FIGS. 26C-26E depict a mold for molding the contact mask is prepared. InFIG. 26C, a Si wafer is shown; while in FIG. 26D it has beenanisotropically etched (e.g., using KOH) to form trenches (e.g.,pyramids or elongated pyramids with smooth sidewalls at an angle of54.74° to the surface if the Si surface is the 100 crystal plane of Si).The mold is also treated with a silane or coated with parylene in orderto provide a non-adherent surface for the PDMS.

FIG. 26E depicts a state of the process where PDMS has been applied tothe mold and in FIG. 26F the contact mask substrate has been loweredonto the mold and pressure applied so as to squeeze out the excess PDMS,which is then cured. In FIG. 26G, the contact mask substrate has beendemolded and RIE has been performed to remove any PDMS molding flashfrom in-between the features, leaving behind bare Si. In FIG. 26H,electrical contact to the Si wafer of the contact mask has been madethrough the spring and thin Ni (not shown) and then Cu have been platedonto the contact mask substrate, the latter to serve as feedstock forthe deposition of Cu when the contact mask is used below. Note thatwhile the contact mask substrate and mold are unusual, the molding andplating processes are otherwise similar to those normally used in themanufacture of contact masks.

FIG. 26I depicts a state of the process where the contact mask and awafer (e.g., Ni, Ti/Au-coated alumina) have been aligned using thealignment targets on each and the two have been mated whilesubstantially parallel. A well-controlled pressure is applied (too muchwill distort the shape of the PDMS tips; too little will allow forplating flash under the tips, though this may be quite acceptable inthis situation. Since the intent is to build the probes upside-down onthis wafer and eventually release them from the wafer, a deposit of anormally thick release layer of Cu before the step shown in FIG. 261, sosome Cu plating flash is hardly an issue. In FIG. 26J, contact has beenmade to the contact mask (serving as an anode) and Cu has been platedonto the wafer around the PDMS tips. In FIG. 26K, the contact mask hasbeen de-mated, leaving behind Cu deposits having trenches similar ingeometry to the PDMS and thus to the original Si mold.

In FIG. 26L, a tip material has been deposited (in fact, this may be twomaterials: a thin film of one such as Rh backed by a thicker film ofanother such as Ni). In FIG. 26M, the layer has been planarized,producing an array of tips. At this point, the standard EFAB process canbe performed to fabricate the probes in alignment above the tips. Ifdesired, the steps shown in FIGS. 261-26M can be carried out at one ormore heights further up (though normally with a different contact maskpattern than that used to pattern the tips as already shown for thetallest probes) in the build to create probes with tips at multipleheights. In this case, as already noted, the contact mask would becarefully aligned to the alignment targets on the wafer.

It should be noted that the pitch between probe tips cannot be extremelysmall using this embodiment of the invention since there must be roombetween the PDMS tips in order to plate Cu feedstock and the distancebetween the Cu feedstock layer and the wafer must typically bereasonable.(e.g., 50 μm or greater) or shorting may occur duringplating.

Another embodiment for generating probe tips which involves the creationof photoresist molds with sloped sidewalls. This embodiment is explainedwith the aid of FIGS. 27A and 27B. A shadow or gray photomask (i.e. amask having areas through which UV light passes but with less intensity)is used to in combination with positive photoresist (e.g. AZ 4620). FIG.27A depicts a standard photomask being used to obtain a stair steppedphotoresist pattern. FIG. 27B depicts the use of a gray scale mask toobtain sloped sidewalls of the photoresist and thus a sloped mold. Probetips may be fabricated by plating a suitable metal into the mold.

A next embodiment of the invention relates to a method of fabricatingprobes with probe tips. The process is shown in FIG. 28.

FIG. 28A depicts a substrate (e.g., alumina) (‘Substrate 1’) with athick (e.g., plated over sputtered) seed layer of sacrificial material(e.g., Cu). An adhesion layer (e.g., Ti—W, not shown) may be usedunderneath the seed layer if needed. In FIG. 28B, resist has beenpatterned and solder has been plated into the apertures. In FIG. 28C, aremovable material (e.g. in or another material that can be melted at alower temperature than solder or etched without damage to the solder)has been applied and in FIG. 28D the layer has been planarized. Thismaterial is assumed here to be conductive and capable of being platedwith sacrificial material with good adhesion; if it is not, suitableseed (and possibly adhesion) layers can be applied before continuing.

In FIG. 28E, a multi-layer probe structure has been fabricated, embeddedin sacrificial material. Note that as shown, In FIG. 28F, resist hasbeen patterned and a relatively tall deposit of material (e.g., Ni)suitable for use as a probe tip core has been plated. In FIG. 28G, theedges of the wafer have been protected (e.g., by lacquer or wax) and inFIG. 28H, electrochemical etching has been performed under conditionsthat result in a sharpening of the protruding deposited metalstructures. Some etching of the sacrificial material surrounding theprobes may also occur. If this occurs to an extent that cannot betolerated, the sacrificial material may be protected (e.g., by patternedresist) prior to the etching.

In FIG. 28I, resist has been patterned so as to expose the sharpenedtips. In FIG. 28J, a tip coating material (e.g., Rh) has been depositedover the tips. In FIG. 28K, the resist has been stripped and in FIG.28L, sacrificial material has been deposited so as to envelop the tips,although this step can be eliminated, for example, if the adhesiveapplied as shown in FIG. 28M is sufficiently thick to accommodate thetip height.

In FIG. 28M, the structure shown in FIG. 28L has been attached toSubstrate 2 using an adhesive (this should be capable of tolerating thetemperatures associated with subsequent processing). If desired, thesacrificial material applied as shown in FIG. 28L can be planarizedprior to this step, such that the adhesive layer can be made thinner. InFIG. 28N, Substrate 1 and the seed layer coating it is removed (e.g., bydissolution of the seed layer). In FIG. 28O, the removable material isremoved and then the solder is reflowed. To minimize heating of theadhesive, the removable material can be removed and/or the solderreflowed using a localized flow of hot air.

In FIG. 28P, the structure shown in FIG. 28O has been flipped over andplaced onto a space transformer (or other device) provided with bondingpads. In FIG. 28Q, the solder has been reflowed, bonding the probes tothe space transformer. In FIG. 28R, Substrate 2 has been removed (e.g.,by removing the adhesive coating it) and an underfill (in this case,permanent) has been wicked in (if needed, for example, to protect thesolder from etching of the sacrificial material) between the sacrificialmaterial and space transformer. In FIG. 28S, the sacrificial materialhas been etched, leaving behind probes bonded to a space transformer.

In alternative embodiments other techniques may be used to get desiredprobe tip configurations.

In other examples probe tips may be created by building an extrudedshape (i.e., build normally) and then electro-chemically sharpeningafter transfer and release. There may be some distortion to the rest ofthe probe structure, but this may be acceptable for some applications.If the level of distortion is unacceptable, a combination of probematerial, probe tip material, and etchant may be chosen such thatetching of the probe tip occurs at a faster rate than the etching of theprobe body.

In an alternative or in addition to careful selection of materials anoperation may be performed prior to sharpening to preferentially enhancethe resistance of the probe body material to sharpening, for example,oxidation or an appropriate CVD reaction.

In the embodiments of FIGS. 9A-9G, 10A-10C, 23A-23U, and 24A-24CC tipformation occurs via a process that makes use of an electroplatingeffect where the overplating and mushrooming of a sacrificial metal overa patterned photoresist layer forms a sacrificial mold that is used toshape the tips.

It has been noticed that overplating (i.e. mushrooming) may produce aslight bulge in the mushroomed sidewalls of the sacrificial metal. Thisbulging has several effects. One is that when the structural material isplated in the hole that is formed by the sacrificial metal, thestructural material follows the curved contour of the sacrificial metalwall, until it reaches the bottom of that hole where the initialphotoresist rests. In this region, due to the bulging of the sacrificialmetal, there exists a small skirting space under the bulge such thatwhen the structural material fills that area in and is released, theresult is a trumpet-like flare to the tip's leading surface. This isdepicted in FIGS. 29A-29D.

If such bulging and flaring occurs an enhanced process may be used asdepicted in FIGS. 30A-30D. On a conductive substrate (either a metallicsubstrate to begin with, or a dielectric substrate with deposited seedlayers) a thin photoresist is spun on and patterned with appropriategeometries for the desired tip shape and size [FIG. 30A]. Overplating isperformed as per the previously discussed fabrication methods, but usinga very low current density. Once this is done, a bulge may exist in theside walls of the holes formed by the sacrificial metal. The low platingcurrent density is assumed to reduce the amount of bulging that willoccur. The sample is then subjected to a PVD deposition of a secondaryseed layer (for example, sputter deposition of TiW/Cu) that willconformably coat all available surfaces—including the space underneaththe bulge as mentioned above [see FIG. 30A]. Once this is complete, athin layer of Cu is electroplated (e.g. having a thickness of ˜sum) overthe seed layer [see FIG. 30B]. Next, the structural material is blanketplated over the entire sample, filling in the hole for the tips [seeFIG. 30C], and then the surface is lapped and polished [see FIG. 30D].The tips are thus formed and fabrication of probe bodies may proceed.

This approach offers several benefits. First, by using a secondary seedlayer and a subsequent sacrificial material (e.g. copper) electroplatedlayer, this leads to the filling in of the region that resulted inflaring of the fabricated tips. Thus when the structural material iselectroplated, it will not form the trumpet-shaped lip at the leadingsurface of the tip.

A second benefit is that by adding a seed layer and a conductive layerover that, a third material separate from the sacrificial and thestructural material may be used to electroplate into the hole first, andthen the rest of the space may be filled with the structural material.This allows coating of the tips with a third, arbitrary material that iselectroplatable (for example, a thin film of Rhodium may beelectroplated into the hole first, then the structural material Ni maybe used to fill in the rest of the hole, thus forming Rh coated Ni tipsafter release).

Third, it was also noticed in previous experiments that for certaingeometries of the tip-patterning photoresist the structural materialmight not fully fill in the space in the hole resulting in a slit or agap in the middle of the tips. This may be undesirable for a number ofreasons, including contamination issues.

Finally, empirical experience has shown that sometimes the photoresistthat had been used for the initial overplating is not always eliminatedupon release etching of the tips. Oftentimes the photoresist will remainbehind as undesired flaps on top of the tip structures upon release. Byadding a seed layer and sacrificial layer above that, any directphysical connection between the tips and the photoresist is eliminated,such that upon release etching of the sacrificial metal, the photoresistloses mechanical adhesion to the build and is removed in the etchingsolution.

In an alternative embodiment a polymer may be used to fill in the spaceunderneath the bulge created by the mushroomed sacrificial material(e.g. copper). First the polymer may be made to fill the entire hole andthen it may be preferentially removed from the central portion of thehole and a seed layer deposited in preparation for depositing tipmaterial. This preferential removal of the polymer may be accomplishedby either simply pouring out the polymer out of the hole, and allowingsurface tension to keep the polymer in the region underneath-the-bulge,and then curing the polymer. The polymer would need to begin as a verythin liquid to allow for this to occur. A second alternative may be toallow the polymer to set, then use directional plasma etch to remove thepolymer from the surface of the mushroomed sacrificial material and thebottom of the hole, but letting it remain behind in the undercutregions. Two examples of this process are depicted in FIG. 31A -31D and32A -32B. FIG. 31A depicts formation of mushroomed sacrificial materialwith an opening filled with polymer. FIG. 31B depicts the removal of aportion of the liquid polymer by pouring it out. FIG. 31C depicts apolymer remaining in the bottom of the hole and filling the regionunderneath the bulge. FIG. 31D depicts deposition of a seed layer overthe entire topology in preparation for depositing tip material. FIG. 32Adepicts the coating of the opening with the polymer which is allowed toset after which a directional plasma etch is used to preferentiallyremove the polymer from the exposed up-facing surfaces. FIG. 32B depictsdeposition of a seed layer over the entire topology in preparation fordepositing tip material.

In another alternative embodiment, it may be possible to perform an etchof the mushroomed copper to try to reduce the size of the bulge. Thiswould be especially useful in bulges that are particularly pronounced,making use of the extended geometry's tendency to be flattened outduring etching.

In another alternative embodiment, it may be possible to minimize oreliminate the bulge with alternating plating baths and platingconditions. Possible baths include, for example, acid-Cu with differentformulations than what is currently used, pyrophosphate baths, andelectroless baths. Additives may also be considered to regulate thegrowth more precisely to reduce the amount of the bulge. Modificationsin the plating conditions may also be tried by varying the platingcurrent density higher or lower, use of pulse plating to deposit,remove, deposit the material, or to deposit at a continuously varyingrate.

A further alternative embodiment may use a different sacrificialmaterial (e.g. something other than copper) in the forming themushroomed overgrowth. For example, Ni may be used. The Ni may be putdown exactly as the Cu, a seed layer deposited, Cu fill-inelectroplated, and the rest of the tip fabricated. The Cu fill-in wouldalso serve as a way for later release and separation of the tip materialfrom the Ni mold. An example of this approach is depicted in FIGS. 33A-33D.

FIG. 33A depicts formation of the mushroomed material using a metalother than Cu—for example, nickel—that may produce less of a bulge thanCu which is followed by deposition of a seed layer over the entiretopology.

FIG. 33B depicts the electroplating of a thin layer of Cu over thedeposited seed layer. This will form a layer of Cu over the photoresistas well as filling in any remaining skirting under the bulge.

FIG. 33C depicts the beginning of planarization of the depositedmaterials while FIG. 33D depicts the result of planarization which setsthe stage for proceeding with the remaining build operations.

In other alternatives it may be possible to use modified patterns of thephotoresist to preferentially shape the mushroomed overgrowth. Forexample, a “Maya pyramid” shaped 2-layer structure may be made usingphotoresist first, with a wider 1st layer and a narrower 2nd layer. Whenthe bulging reaches the 2nd layer, the plating stops and the top surfaceof the 2nd layer is then taken as the now bottom of the tip mold. Thecrevice underneath the bulge is never exposed to the electroplatingsince the 2-layer photoresist fits into that profile. Alternatively, a1st layer can be patterned, the Cu electroplated and mushroomed and thebulge allowed to form, and then a second photoresist/photolithographystep may be performed to allow the photoresist to fill in the hole, andthen be patterned to have the 2nd layer fill in the bottom of the tipmold. This way, reminiscent of Method Two, the photoresist polymer willfill in the crevice underneath the bulge. Finally, a seed layer isdeposited and the rest of the tip built. Another way to use modifiedpatterns may be to use different shapes altogether, for example, a ringof photoresist instead of a circular disk. An example of the pyramidapproach is depicted in FIGS. 34A -34D.

FIG. 34A depicts formation of mushroom using a 2-tiered photoresistpattern. FIG. 34B depicts deposition of a seed layer over the entiretopology and a thin layer of electroplated sacrificial material over thedeposited seed layer. FIG. 34C depicts the beginning of planarization ofthe deposited materials while FIG. 34D depicts the result ofplanarization which sets the stage for proceeding with the remainingbuild operations.

In some alternative embodiments, probe tips as made by one or more ofthe various processes described herein may have solder or other bondingmaterial located on their back sides (i.e. the side away from the tip)and then the tips may be bonded to any desired prefabricated metaltarget. Example of such probe tips are shown in FIG. 35A and an exampleof such probe tips being bonded to a set of COBRA probes is shown inFIG. 35B. Of course in other embodiments, the tips may be bonded toother things, bonding may occur simultaneously with a smaller number oftips or with a larger number of tips, and/or something other than tipsmay be transferred.

In alternative embodiments other techniques may be used to get desiredprobe tip configurations. For example, it may be possible to getundercut photoresists by using a shadowed or grey scaled photomask toexpose the photoresist which upon development will yield a slopedsurface.

In some embodiments probe tips may be made from the same material as theprobe elements themselves (e.g. Ni or Ni—P) while in other embodimentsprobe tips may be formed from one or more different materials (e.g.palladium (Pd), gold (Au), rhodium (Rh), or rhenium) or coating on theprobe tips may be formed from these other materials.

Some embodiments may employ diffusion bonding or the like to enhanceadhesion between successive layers of material. Various teachingsconcerning the use of diffusion bonding in electrochemical fabricationprocess-is set forth in U.S. patent application Ser. No. 60/534,204filed Dec. 31, 2003 by Cohen et al. which is entitled “Method forFabricating Three-Dimensional Structures Including Surface Treatment ofa First Material in Preparation for Deposition of a Second Material” andwhich is hereby incorporated herein by reference as if set forth infull.

Further teaching about microprobes and electrochemical fabricationtechniques are set forth in a number of U.S. patent applications whichare filed on Dec. 31, 2003 herewith. These Filings include: (1) U.S.patent application Ser. No. 60/533,933 by Arat et al. and which isentitled “Electrochemically Fabricated Microprobes”; (2) U.S. patentapplication Ser. No. 60/533,947 by Kumar et al. and which is entitled“Probe Arrays and Method for Making”; (3) U.S. patent application Ser.No. 60/533,948 by Cohen et al. and which is entitled “ElectrochemicalFabrication Method for Co-Fabricating Probes and Space Transformers”;and (4) U.S. patent application Ser. No. 60/533,897 by Cohen et al. andwhich is entitled “Electrochemical Fabrication Process for FormingMultilayer Multimaterial Microprobe structures”. These patent filingsare each hereby incorporated herein by reference as if set forth in fullherein.

Further teachings about planarizing layers and setting layersthicknesses and the like are set forth in the following U.S. patentapplications: (1) U.S. patent application Ser. No. 60/534,159 filed Dec.31, 2003 by Cohen et al. and which is entitled “ElectrochemicalFabrication Methods for Producing Multilayer Structures Including theuse of Diamond Machining in the Planarization of Deposits of Material”and (2) U.S. patent application Ser. No. 60/534,183 filed Dec. 31, 2003by Cohen et al. and which is entitled “Method and Apparatus forMaintaining Parallelism of Layers and/or Achieving Desired Thicknessesof Layers During the Electrochemical Fabrication of Structures”. Thesepatent filings are each hereby incorporated herein by reference as ifset forth in full herein.

Additional teachings concerning the formation of structures ondielectric substrates and/or the formation of structures thatincorporate dielectric materials into the formation process andpossibility into the final structures as formed are set forth in anumber of patent applications. The first of these filings is U.S. patentapplication Ser. No. 60/534,184, filed Dec. 31, 2003 which is entitled“Electrochemical Fabrication Methods Incorporating Dielectric Materialsand/or Using Dielectric Substrates”. The second of these filings is U.S.patent application Ser. No. 60/533,932, filed Dec. 31, 2003 which isentitled “Electrochemical Fabrication Methods Using DielectricSubstrates”. The third of these filings is U.S. patent application Ser.No. 60/534,157, filed Dec. 31, 2003 which is entitled “ElectrochemicalFabrication Methods Incorporating Dielectric Materials”. The fourth ofthese filings is U.S. patent application Ser. No. 60/533,891, filed Dec.31, 2003 which is entitled “Methods for Electrochemically FabricatingStructures Incorporating Dielectric Sheets and/or Seed layers That ArePartially Removed Via Planarization”. A fifth such filing is U.S. patentapplication Ser. No. 60/533,895, filed Dec. 31, 2003 which is entitled“Electrochemical Fabrication Method for Producing Multi-layerThree-Dimensional Structures on a Porous Dielectric” These patentfilings are each hereby incorporated herein by reference as if set forthin full herein.

Various other embodiments of the present invention exist. Some of theseembodiments may be based on a combination of the teachings herein withvarious teachings incorporated herein by reference. Some embodiments maynot use any blanket deposition process and/or they may not use aplanarization process. Some embodiments may involve the selectivedeposition of a plurality of different materials on a single layer or ondifferent layers. Some embodiments may use selective depositionprocesses or blanket deposition processes on some layers that are notelectrodeposition processes. Some embodiments may use nickel as astructural material while other embodiments may use different materials.Some embodiments may use copper as the structural material with orwithout a sacrificial material. Some embodiments may remove asacrificial material while other embodiments may not. Some embodimentsmay employ mask based selective etching operations in conjunction withblanket deposition operations. Some embodiments may form structures on alayer-by-layer base but deviate from a strict planar layer on planarlayer build up process in favor of a process that interlacing materialbetween the layers. Such alternating build processes are disclosed inU.S. application Ser. No. 10/434,519, filed on May 7, 2003, entitledMethods of and Apparatus for Electrochemically Fabricating StructuresVia Interlaced Layers or Via Selective Etching and Filling of Voidswhich is herein incorporated by reference as if set forth in full.

Furthermore, U.S. application Ser. No. 10/949,738, filed Sep. 24, 2004;Ser. No. 10/772,943, filed Feb. 4, 2004; Ser. No. 60/445,186, filed Feb.4, 2003; and Ser. No. 60/506,015, filed Sep. 24, 2003 are incorporatedherein by reference

In view of the teachings herein, many further embodiments, alternativesin design and uses of the instant invention will be apparent to those ofskill in the art. As such, it is not intended that the invention belimited to the particular illustrative embodiments, alternatives, anduses described above but instead that it be solely limited by the claimspresented hereafter.

1. A method for creating a contact structure, comprising: forming acontact tip having a desired configuration; forming a compliant probestructure from a plurality of adhered layers of electrochemicallydeposited material where each layer undergoes a planarization operationprior to formation of a subsequent layer; and adhering the contact tipto the probe structure to form a contact structure.
 2. A method forcreating a contact structure, comprising: forming a contact tip having adesired configuration; forming a compliant probe structureelectrochemically; and adhering the contact tip to the probe structureto form a contact structure, wherein the contact tip has a shape that isderived at least in part from the mushrooming of an electrodepositedsacrificial material over a dielectric material.
 3. The method of claim1 wherein the contact tip has a shape that is derived from depositing atip material in a pattern etched in silicon.
 4. The method of claim 1wherein the contact tip has a shape that is derived at least in part viamolding contact tip material in voids formed in patterned photoresist.5. The method of claim 1 wherein the contact tip has a shape that isderived at least in part via etching of a patterned tip material.
 6. Themethod of claim 1 wherein the contact tip has a shape that is derived atleast in part via isotropic etching of a tip material around etchingshields.
 7. The method of claim 1 wherein the contact tip has a shapethat is derived at least in part via hot pressing.
 8. The method ofclaim 1 wherein the contact tip comprises a different material than thecompliant probe structure.
 9. The method of claim 1 wherein the contacttip comprises the same material as the probe structure.
 10. The methodof claim 1 wherein the contact tip comprises a coating material.
 11. Themethod of claim 1 wherein the contact tip comprises a coating materialand the probe structure comprises a coating material.
 12. The method ofclaim 11 wherein the coating material on the tip is different from thecoating material on the probe structure.
 13. The method of claim 12wherein the coating material on the tip is the same as the coatingmaterial on the probe structure.
 14. A method for creating a contactstructure, comprising: forming a contact tip having a desiredconfiguration; forming compliant probe structure from a plurality ofadhered layers of deposited conductive structural material, where eachlayer comprises a conducitve structural material and a conductivesacrificial material, where each layer undergoes a planarizationoperation to bring a surface of the conductive structural material andthe conductive sacrificial material to a common level, and whereconductive sacrificial material is removed from multiple layers afterformation of plurality of adhered layers; and adhering the contact tipto the probe structure to form a contact structure.